WMSIC Electronic Components

HRE CGA0603C0G220J500JT

ModelCGA0603C0G220J500JT
Package0603
BrandHRE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

18 specifications

Core information

Product name
HRE CGA0603C0G220J500JT
Type
HRE
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HRE
Electronic Component
CGA0603C0G220J500JT
Electronic Component
1
Electronic Component
22pF
Package
0603
Electronic Component
SMD Capacitor(MLCC)
Electronic Component
±5%
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0264495161
Electronic Component
C0G
Voltage
50V
Electronic Component
Electronic Component
Electronic Component
4000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

CGA0603C0G220J500JT 积层陶瓷电容产品概述

一、产品核心身份与基础参数

CGA0603C0G220J500JT是HRE芯声电子推出的高频稳定型积层陶瓷电容(MLCC),型号命名严格遵循行业编码规则:

  • CGA:积层陶瓷电容(Monolithic Ceramic Capacitor)专属标识;
  • 0603:英制封装尺寸(对应公制1608,即1.6mm×0.8mm);
  • C0G:温度系数代码(国际标准NP0,正负温度系数抵消,稳定性极致);
  • 220:容值编码(前两位“22”为有效数,第三位“0”为10⁰次方,即22pF);
  • J:容值精度(±5%);
  • 500:额定直流电压(50V);
  • JT:HRE特有的工艺优化系列标识(针对高频场景的电极结构升级)。

基础参数汇总:

参数项 规格值 标称容值 22pF 容值精度 ±5%(J档) 额定直流电压 50V 温度系数 C0G(NP0) 工作温度范围 -55℃~125℃ 封装尺寸 1.6mm×0.8mm×0.8mm 环保标准 RoHS compliant(无铅)

二、关键性能特性解析

该产品核心优势聚焦高频稳定性、低损耗及精密容值控制,具体表现为:

  1. 全温区容值零漂移:C0G材质温度系数为±0ppm/℃,在-55℃至125℃范围内,22pF容值漂移量≤±0.03pF(远低于X7R电容±15%的漂移),适配对频率/相位精度严苛的场景;
  2. 低高频损耗:1kHz/1V测试条件下,典型损耗角正切值(DF)≤0.15%;100MHz高频场景中,DF仍维持≤0.2%,避免信号能量衰减;
  3. 高容值精度:±5%的精度无需额外容值补偿,降低电路设计复杂度,适合精密模拟电路;
  4. 中低压可靠承载:50V额定电压覆盖3.3V、5V、12V等主流中低压系统,降额使用(≤40V)可进一步提升长期可靠性。

三、封装与可靠性设计

0603封装是高密度PCB的主流选择,HRE针对该封装的可靠性优化包括:

  1. 封装兼容性:标准尺寸1.6mm×0.8mm×0.8mm,兼容90%以上贴片机吸嘴规格,焊接符合IPC-A-610电子组件标准;
  2. 端电极工艺:采用“银基内层+镍阻挡层+无铅锡层”三层结构,避免焊接时银迁移问题,同时提升焊料润湿性(润湿面积≥90%),降低虚焊率;
  3. 可靠性测试验证:通过IEC 60384-1陶瓷电容通用标准,核心测试结果:
    • 高温高湿(85℃/85%RH,1000小时):容值变化≤±2%,DF≤0.2%;
    • 温度循环(-55℃→125℃,1000次):无开裂、容值稳定;
    • 耐电压(100V DC,1分钟):无击穿。

四、典型应用场景

基于高频稳定特性,该电容广泛应用于以下领域:

  1. 高频振荡电路:晶振匹配电容(如16MHz、24MHz晶振负载电容),确保振荡频率稳定,减少频率漂移;
  2. 射频(RF)前端:滤波器、耦合器、天线匹配网络中的电容,降低信号损耗,提升通信距离;
  3. 精密模拟电路:运放反馈电容、ADC/DAC参考电容,避免容值变化对信号精度的影响;
  4. 数字电路去耦:CPU、FPGA电源去耦电容,快速抑制电源纹波(响应时间≤1ns),提升系统稳定性;
  5. 工业控制:PLC、传感器模块的信号耦合电容,适应-40℃~85℃宽温环境。

五、选型与使用注意事项

  1. 电压降额:实际工作电压需≤额定电压的80%(即≤40V),避免长期过压导致电容老化;
  2. 焊接工艺:回流焊峰值温度控制在235℃~245℃(持续≤10秒),手工焊温度≤350℃(焊接≤3秒),防止热冲击;
  3. 静电防护:C0G电容对静电敏感(击穿电压≤100V),需在ESD防护环境下存储、焊接,使用离子风机消除静电;
  4. 容值匹配:若需大容量(μF级),需选择X7R/X5R材质,但高频稳定性下降,需根据场景平衡;
  5. 库存管理:存储温度≤30℃、湿度≤60%,避免长期暴露高湿环境,防止端电极氧化。

该产品凭借稳定的高频性能与可靠的封装设计,成为消费电子、工业控制、射频通信等领域的优选电容。

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