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HRE CGA0805X5R106K250MT
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
18
specifications
Core information
- Product name
- HRE CGA0805X5R106K250MT
- Type
- HRE
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HRE
- Electronic Component
- CGA0805X5R106K250MT
- Electronic Component
- 1
- Electronic Component
- 10uF
- Package
- 0805
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±10%
- Electronic Component
- 0.039g
- Electronic Component
- 1
- Electronic Component
- BM0264495339
- Electronic Component
- X5R
- Voltage
- 25V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CGA0805X5R106K250MT 产品概述
一、产品简介
CGA0805X5R106K250MT（品牌：HRE / 芯声）为贴片多层陶瓷电容（MLCC），额定容量10 μF，公差±10%，额定电压25 V，介质材料X5R，封装规格0805（约2.0 × 1.25 mm）。此型号为通用型高容量X5R陶瓷电容，适用于对体积与频率响应有要求的去耦与滤波场合。
二、关键电气特性
- 电容：10 μF；初始公差±10%
- 额定电压：25 V DC
- 温度特性：X5R（工作温度范围通常为-55°C～+85°C，温度引起的电容变化在规定区间内可达±15%）
- 低等效串联电阻（ESR）与低等效串联电感（ESL），适合高频去耦与旁路用途
- 体积小、可靠性高、漏电流极低（陶瓷电容固有特性）
三、设计与使用建议
- DC偏置效应：高介电常数材料在施加直流电压时电容值会显著下降，尤其是大容量/小封装产品。设计时请考虑电压去保留裕度，关键电容建议采用额定电压的一半作为工作电压或在实际应用中验证偏置曲线。
- 高频性能优化：并联多个不同容值（如0.1 μF、1 μF 与10 μF）可获得更宽频带的去耦效果。10 μF X5R 适合作为低频旁路/能量缓冲，与小容值陶瓷并联可提高高频响应。
- PCB布线：贴近IC电源引脚安放，短路径回流，增加焊盘长度以保证焊接可靠性，避免板弯造成机械应力导致开裂或电容失效。
四、封装与工艺
- 尺寸：0805（公称2.0×1.25 mm，厚度依厂家工艺略有差异）
- 封装方式：卷带（Tape & Reel），便于SMT贴片生产（MT通常指卷带包装）
- 焊接建议：遵循J-STD-020回流焊曲线，避免超时高温及重复回流；注意回流后冷却速率不要过快以减少应力。储运和贴装过程中应防止机械冲击与弯曲。
五、适用场景与注意事项
- 常见应用：微处理器/功率IC电源去耦、DC-DC转换器输入/输出滤波、消费类与工业电子的旁路与滤波网络。
- 非建议用途：作为长期大能量储能元件或替代电解电容承载大纹波电流的主件（在需要大量能量储备时建议与电解或固态电容配合）。
- 认证与可靠性：HRE产品通常满足RoHS等环保要求；若需车规或工业级认证（如AEC-Q200 等），建议在采购前向厂商确认具体型号的认证状态及失效统计。
如需该型号的样品测试数据（DC bias 曲线、ESR/阻抗参数、机械尺寸图）或PCB封装建议文件，我可以协助整理并给出更详细的设计参考。
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