WMSIC Electronic Components

Infineon BC857AE6327

ModelBC857AE6327
PackageSOT-23-3
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon BC857AE6327
Type
INFINEON
Minimum package
3000 卷

Technical parameters

Electronic Component
8
Electronic Component
INFINEON
Electronic Component
BC857AE6327
Electronic Component
1
Package
SOT-23-3
Electronic Component
Transistor(BJT)
Electronic Component
0.034g
Electronic Component
1
Electronic Component
BM0264680617
Transistor Type
PNP
Frequency(f T)
250MHz
Power Dissipation(Pd)
330mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
100mA
Current (h FE)
125

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC857AE6327 产品概述

一、产品简介

BC857AE6327 是英飞凌(Infineon)推出的一款小信号 PNP 双极型晶体管,采用 SOT-23-3 小封装,面向通用开关与放大应用。该器件在 45 V 的集电极-射极耐压下,能够处理最高 100 mA 的集电极电流,并且具有良好的直流电流增益与较高的特征频率,适合要求速度和增益兼顾的便携与消费电子电路。

二、主要参数(概述)

  • 晶体管类型:PNP,双极晶体管(BJT)
  • 最大集电极电流 (Ic):100 mA
  • 集电极-射极击穿电压 (Vceo):45 V
  • 功耗耗散 (Pd):约 330 mW(SOT-23 封装)
  • 直流电流增益 (hFE):典型约 125(符合 A 级增益分组)
  • 特征频率 (fT):约 250 MHz(适合高频开关与小信号放大)
  • 集电极截止电流 (Icbo):约 15 nA(低泄漏,有利于低功耗设计)
  • 集电极饱和电压 (VCE(sat)):约 650 mV(典型值,具体测试条件见规格书)
  • 封装:SOT-23-3(小型、适合表贴)

三、关键特性与优势

  • 低泄漏:Icbo 仅几十纳安级,适合需要低静态电流的电池供电或精密传感输入场景。
  • 中等到高增益:hFE≈125,对于小信号放大和缓冲电路能够提供稳定的增益表现。
  • 高速响应:fT≈250 MHz,使其在高频开关与射频前端或视频信号处理场合具有良好的相位与带宽性能。
  • 直流电压耐受性好:45 V 的 Vceo 允许在较高电压侧进行开关或电平移位应用,比起一般低压小信号管有更大的余量。
  • 小封装节省空间:SOT-23-3 便于高密度 PCB 布局和自动化贴装。

四、典型应用场景

  • 低电流开关与信号控制:驱动小继电器、光耦输入侧、微控制器外设开关。
  • 小信号放大:前级放大器、差分/电平移位、音频与传感器信号放大。
  • 互补推挽与模拟电路:与对应的 NPN 器件配合用于小功率推挽输出或模拟缓冲。
  • 高速数字接口:作为电平转换或总线隔离的高速开关元件。
  • 便携式与低功耗设备:因低 Icbo 适合省电设计,但需注意封装功耗限制。

五、封装与热管理建议

BC857AE6327 采用 SOT-23 小封装,单元体积小但散热能力有限。器件 Pd 约 330 mW(典型环境下),实际电路设计时应注意:

  • 在 PCB 布局中为集电极/散热铜箔预留足够面积,以降低结温并提高功耗承受能力。
  • 对于连续开关或较大功耗情形,应保证工作点远低于最大耗散,并采用热降额(derating)原则。
  • 若工作环境温度较高,需评估结温上升对 hFE 与泄漏电流的影响,并必要时添加热保护或选择更大功耗封装。

六、常用电路与选型建议

  • 作为开关:用作饱和开关时注意 VCE(sat) 在 650 mV 量级,若需要更低饱和压以减小功耗,可选择专门的低 VCE(sat) 开关管。
  • 作为放大器:对于低噪声或要求高线性度的前级,可通过合理偏置和退耦来稳定工作点;hFE 的分布会随电流和温度变化,实际电路中建议在设计中留有反馈或偏置调整余量。
  • 与 NPN 器件配对:BC857 系列常与 BC847 等 NPN 小信号管配合使用,形成对称放大或互补开关结构。
  • 引脚与封装:SOT-23 的具体引脚排列会因供应商文档而异,推荐在设计前参照英飞凌官方数据手册确认引脚定义与典型测试条件。

七、采购与替代建议

BC857AE6327 为英飞凌的 A 级增益分组器件,适用于对增益有稳定性要求的场合。若需更高电流或更高功耗能力,可考虑同类 TO-92 或 SOT-223 等更大封装的 PNP 产品;若需更低饱和压或极低噪声,可查找针对开关或低噪声优化的器件型号。最终选型应以实际工作电流、功耗、带宽与封装面积为依据。

备注:以上参数为典型产品特性概要,设计与生产前请以英飞凌正式数据手册(datasheet)为准,确认测试条件与最大额定值。

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