WMSIC Electronic Components

Infineon IRFL4310TRPBF

ModelIRFL4310TRPBF
PackageSOT-223
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFL4310TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFL4310TRPBF
Electronic Component
1
Package
SOT-223
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.194g
Electronic Component
1
Electronic Component
BM0225926688
Power Dissipation(Pd)
2.1W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRFL4310TRPBF

IRFL4310TRPBF是一款高性能的N沟道MOSFET,由知名供应商英飞凌(Infineon)生产。该器件专为高效功率管理和开关应用设计,具有优异的电气性能和可靠性,其主要应用领域包括电源转换、电机驱动、开关电源及各种需要高速切换的电子系统中。

基本参数

  1. FET 类型与技术:IRFL4310TRPBF为N通道MOSFET,采用金属氧化物半导体技术制造,具有良好的导通性能和高输入阻抗特性。
  2. 电压与电流规格:该器件的漏源电压(Vdss)为100V,支持连续漏极电流(Id)达到1.6A,确保其在高压和中等电流应用场景中的优越性能。
  3. 导通电阻:在10V的栅源电压(Vgs)和1.6A的漏极电流条件下,IRFL4310TRPBF的最大导通电阻(Rds(on))仅为200毫欧,这使得其在低功耗和低热量损耗方面表现优异。
  4. 栅极阈值电压:Vgs(th)的最大值为4V(在250µA的条件下),意味着该器件在较低的栅源电压下即可开始导通,适合低压驱动应用。
  5. 栅极电荷特性:在10V的Vgs条件下,其最大栅极电荷(Qg)为25nC,这表示其在开关操作时保持较低的驱动功耗,适用于高频率开关工作。
  6. 输入电容:在25V的Vds下,输入电容(Ciss)为330pF,提供良好的输入响应特性,适合高速电路设计。
  7. 功率耗散与温度范围:最大功率耗散为1W(在环境温度Ta下),工作温度范围广泛,从-55°C至150°C,显示出该器件在严格环境条件下的稳定性和适用性。

封装与安装

IRFL4310TRPBF采用SOT-223封装,这种表面贴装类型的设计使其容易集成到现代电子电路板上。该封装不仅占用空间小,同时也有助于散热配合,为电路提供了良好的散热条件。

应用领域

得益于其卓越的电气性能,IRFL4310TRPBF广泛应用于多个领域:

  • 开关电源:可以作为开关元件使用,使得电源转换效率显著提升。
  • 电机驱动:在消费电子、电动车及工业自动化设备中,可以有效驱动各种类型的电机。
  • LED驱动:适合用于LED照明项目,实现高效的驱动控制。
  • 便携式电子设备:由于其高效的性能,适用于需要小型、高效电源管理方案的便携式电子设备。

总结

总的来说,IRFL4310TRPBF是一款可靠而高效的N沟道MOSFET,适用于各种需要高电压和中等电流的应用。其低导通电阻、高阈值电压和良好的热性能,使其成为众多电子设计工程师的首选元器件。无论是在功率转换、电机控制还是高频开关应用方面,该器件都能满足严苛的要求,是现代电子设计不可或缺的基础元件之一。

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