WMSIC Electronic Components

Infineon BSC070N10NS3G

ModelBSC070N10NS3G
PackageTDSON-8(5x6)
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon BSC070N10NS3G
Type
INFINEON
Unit
Electronic Component
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSC070N10NS3G
Electronic Component
1
Package
TDSON-8(5x6)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.144g
Electronic Component
1
Electronic Component
BM0000281757
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
114W
Electronic Component
Electronic Component
Electronic Component
5000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:BSC070N10NS3G N沟道MOSFET

基本信息

BSC070N10NS3G 是由英飞凌(Infineon)公司生产的一款高性能N沟道场效应管(MOSFET),其具有出色的电气特性和热管理能力,适用于多种应用场景。该器件采用TDSON-8封装,外形尺寸为5mm x 6mm,适合高密度电路设计。

主要参数

  • 漏源电压(Vdss): 100V
  • 连续漏极电流(Id@25°C): 90A(在 Tc的条件下)
  • 栅源极阈值电压: 3.5V @ 75μA
  • 漏源导通电阻(Rds(on)): 7mΩ @ 50A, 10V
  • 最大功率耗散(Ta=25°C): 114W(在 Tc的条件下)
  • 封装类型: TDSON-8

特性与优势

  1. 高漏源电压: BSC070N10NS3G的漏源电压高达100V,能有效应对多种高压应用,提供更大的设计灵活性。
  2. 高电流承载能力: 连续漏极电流高达90A,使得该MOSFET能够在重负荷条件下稳定运行,非常适合电源管理和电机驱动等应用。
  3. 低导通电阻: 无限接近于理想开关特性的7mΩ导通电阻在保持低发热量的同时确保高效的电源传输,是节能设计的理想选择。
  4. 适应宽温度范围: 该MOSFET的最大功率耗散能力达到114W,意味着在良好散热解决方案下,它可以在较高温度环境中工作,适应多种工业环境。
  5. 快速开关特性: 由于其相对较低的栅源极阈值电压(3.5V),BSC070N10NS3G具有较好的开关能力,从而适用于高频开关电源和电动机控制等应用。

应用场景

BSC070N10NS3G广泛应用于以下领域:

  • 电源管理: 作为电源开关和反向隔离开关可提升系统的线性度和稳定性。
  • DC-DC转换器: 作为高效开关元件,能够优化能量转换,降低功耗。
  • 电机驱动: 可应对高电流需求,提升电动机驱动的响应速度和功率输出。
  • LED驱动: 在LED照明应用中能有效提升能效和使用寿命。

设计注意事项

在选择BSC070N10NS3G进行电路设计时,考虑系统的散热能力至关重要。确保良好的散热处理,以实现其最大功率耗散,并防止器件过热。此外,优化PCB设计和布局,以减少引线电感和电阻,确保MOSFET的性能得到充分发挥。

总结

BSC070N10NS3G是一款性能优异、应用广泛的N沟道MOSFET,凭借其高电压、高电流和低导通电阻的特性,特别适用于现代电源管理和驱动系统。无论是在工业自动化、消费电子还是新能源汽车等领域,都能为设计工程师提供强而有力的支持,帮助其在实现高效能的同时降低能耗。

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