WMSIC Electronic Components

Infineon BSS205NH6327XTSA1

ModelBSS205NH6327XTSA1
PackageSOT-23
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon BSS205NH6327XTSA1
Type
INFINEON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSS205NH6327XTSA1
Electronic Component
1
Package
SOT-23
Electronic Component
MOSFET
Electronic Component
MOSFET
Electronic Component
0g
Electronic Component
1
FET Type
N
Electronic Component
BM0058432666
Type
Surface Mount
Operating Temperature
55°C ~ 150°C(TJ)
Package / Housing
TO-236-3,SC-59,SOT-23-3
Vgs
±12V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:BSS205NH6327XTSA1 N沟道 MOSFET

基本介绍

BSS205NH6327XTSA1是一款高性能的N沟道金属氧化物场效应管(MOSFET),由德国著名半导体制造商英飞凌(Infineon)生产。该器件以其优异的电气特性和高可靠性广泛应用于各类电子电路中,特别是在需要高开关速度和低导通损耗的场合。

电气特性

BSS205NH6327XTSA1的漏源电压(Vdss)为20V,最大连续漏极电流(Id)为2.5A,这使得它适用于大多数低电压电源管理和开关应用。该器件的导通电阻(Rds On)在典型工作条件下可低至50毫欧,这对于在较低电压下运行的电路非常重要,以减少功耗和热量积聚。

该MOSFET在工作温度范围内(-55°C ~ 150°C)表现出良好的性能,使得它能够在恶劣环境下稳定运行。它的功率耗散最大可达500mW(在环境温度为Ta时),使其适用于如电机控制、开关电源等应用。

驱动和栅极特性

为了驱动该器件,推荐的栅极驱动电压为2.5V至4.5V。低栅极驱动电压实现了与低功耗微控制器的兼容性。此外,在Vgs(th)(阈值电压)方面,其最大值为1.2V(在11µA的测试电流下),这意味着MOSFET在较低的控制电压下便可导通,进而减少系统的能耗和提高效率。

关于栅极电荷(Qg),该器件的最大值为3.2nC(在4.5V下),这表明其在开关操作中需要的输入驱动能量较小,进一步促进了开关速度和降低了切换损耗。

封装与安装方式

BSS205NH6327XTSA1采用SOT-23-3封装,体积小巧,非常适合现代电子产品对空间的高度要求。SOT-23-3封装的表面贴装(SMD)特性使得这种元件在电子产品的自动化生产中得到了广泛应用。该封装不仅易于安装,而且通过其适当的散热设计,有助于提升器件的热管理能力。

应用领域

凭借其高开关频率、低导通电阻和宽广的工作温度范围,BSS205NH6327XTSA1被广泛应用于电子开关、功率调节器、LED照明驱动、工控设备、以及电机控制电路等各种领域。此外,它还可用于电源管理系统,尤其是在手机、平板电脑、及其他便携设备中的应用中,来实现高效的电源开关功能。

总结

BSS205NH6327XTSA1 N沟道MOSFET是一款集高效能、低功耗、小封装于一身的理想选择,能够满足现代电子产品对性能和效率的要求。凭借其坚固的技术基础和来自英飞凌的质量保证,该器件在各类应用中发挥着重要作用,成为电子工程师设计电路时的重要考虑元件。无论是在高温或低温环境下,BSS205NH6327XTSA1都能提供稳定的电气性能,提升最终产品的可靠性和功效。

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