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Infineon BSC059N04LSG
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon BSC059N04LSG
- Type
- INFINEON
- Minimum package
- 5000
Technical parameters
- Electronic Component
- INFINEON
- Electronic Component
- BSC059N04LSG
- Electronic Component
- 1
- Package
- TDSON-8(5x6)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.191g
- Electronic Component
- 1
- Electronic Component
- BM0228545460
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 50W
- Electronic Component
- 5000
- Voltage(Vdss)
- 40V
- Capacitor(Ciss)
- 3.2nF
- Output Capacitor(Coss)
- 720pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSC059N04LSG 产品概述
一、概述
BSC059N04LSG 是英飞凌（Infineon）一款 TDSON-8（5×6）封装的 N 沟增强型功率 MOSFET，额定漏源耐压 40V，适用于开关电源、同步整流与高密度功率管理场合。该器件在 VGS=10V 时导通电阻极低（RDS(on)=5.9mΩ），配合较大的漏极电流能力和中等栅极电荷量，兼顾低导通损耗与开关性能。
二、主要电气参数
- 漏源电压 Vdss：40V
- 连续漏极电流 Id：73A（器件级别标称）
- 导通电阻 RDS(on)：5.9mΩ @ VGS=10V
- 耐耗散功率 Pd：50W
- 阈值电压 VGS(th)：2V @ ID=23µA
- 总栅极电荷 Qg：40nC @ VGS=10V（影响驱动能量）
- 输入电容 Ciss：3.2nF；输出电容 Coss：720pF；反向传输电容 Crss：28pF
- 工作温度：-55℃ ~ +150℃
注意：部分应用资料中可能出现“2.5W/40V/16A”等描述，为特定工况或标注差异，请以官方数据手册为准。
三、封装与热管理建议
TDSON-8（5×6）提供紧凑表面贴装与热轭结构。尽管器件功耗能力较强，实际布局应注意：
- 在 PCB 下方开设热焊盘并配以多处过孔（thermal via）与内部铜箔回流，降低结到环境热阻。
- 尽量缩短与 MOSFET 引脚的走线，减少寄生电感以降低开关损耗与振铃。
- 在高功率工况下按厂商热阻参数做功率降额与散热设计，保证结温不超过允许值。
四、驱动与开关注意事项
- 由于 Qg≈40nC，驱动器需有足够峰值电流能力以实现快速切换，推荐栅极驱动电压 10V 以达到标称 RDS(on)。
- 使用 5–22Ω 的串联栅极电阻可抑制振铃、控制 dV/dt 并限制峰值电流；在并联栅极驱动或多器件并联时应注意阻值匹配。
- 对于高 dV/dt 环境，建议并联缓冲型驱动或加 RC 池/阻尼网络保护，并在必要处使用 TVS 或箝位电路防止瞬态超压。
五、典型应用场景
- 同步整流与 DC–DC 降压转换器（中小功率到高密度应用）
- 负载开关、电源管理与分路控制
- 电机驱动前端、通信与工业电源等需要 40V 额定值的场合
六、可靠性与选型提示
- 在高温或高应力脉冲条件下，请按数据手册对电流和功耗进行降额设计。
- 注意 ESD 防护及正确的 SMT 回流焊工艺；若有湿敏等级（MSL）信息，请遵循封装处理规程。
- 若需并联使用以提高电流能力，应做好 RDS(on) 匹配、共享电流与热分布设计。
七、采购与资料
为确保设计与可靠性，请获取英飞凌官方数据手册与封装图纸（包括热阻、典型特性曲线与推荐 PCB 焊盘），并在样片验证时测试实际开关损耗与热行为。
如需我为具体电路（例如同步降压或半桥）给出布局与驱动元件的推荐值，可提供电路参数，我将给出针对性的设计建议与计算。
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