WMSIC Electronic Components

Infineon BSZ096N10LS5ATMA1

ModelBSZ096N10LS5ATMA1
PackageTSDSON-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon BSZ096N10LS5ATMA1
Type
INFINEON
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSZ096N10LS5ATMA1
Electronic Component
1
Package
TSDSON-8
Electronic Component
MOSFET
Electronic Component
MOSFET
Electronic Component
OptiMOS™ 5
Electronic Component
0g
Electronic Component
Infineon Technologies
Electronic Component
1
FET
Electronic Component
FET Type
N
Electronic Component
BM0227677860
Type
Surface Mount
Operating Temperature
55°C ~ 150°C(TJ)

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSZ096N10LS5ATMA1 — Infineon OptiMOS™ 5 N沟场效应管产品概述

一、产品简介

BSZ096N10LS5ATMA1 是英飞凌 OptiMOS™ 5 系列的一款 N 沟功率 MOSFET,采用低阻抗、低开关损耗设计,适用于需要高效率和高密度封装的电源管理场景。器件封装为 TSDSON-8(供应商封装 PG-TSDSON-8-FL),为卷带(TR)贴片交付,器件状态为有源。

二、主要电气参数

  • 漏源电压 Vdss:100 V
  • 连续漏极电流 Id(Tc):40 A
  • 最大功耗 Pd(Tc):69 W
  • 最大栅压 Vgs:±20 V;栅阈值 Vgs(th) ≤ 2.3 V(@ 36 µA)
  • 在 Vgs=10 V、Id=20 A 时导通电阻 Rds(on)(最大):9.6 mΩ
  • 输入电容 Ciss(最大):2100 pF(@ Vds=50 V)
  • 栅极电荷 Qg(最大):22 nC(@ Vgs=10 V)
  • 工作结温:-55 °C ~ 150 °C(TJ)

三、性能亮点

  • 低导通电阻带来较低的导通损耗,适合中高电流路径使用。
  • 适度的栅极电荷和较大的输入电容在开关速度与驱动能耗之间取得平衡,有利于升降压转换器和同步整流器的效率优化。
  • 紧凑的 TSDSON 封装利于热性能与 PCB 布局在高密度设计中的协调。

四、典型应用场景

  • 同步整流和开关电源(SMPS)输出级、DC–DC 降压/升压转换器
  • 服务器、通信设备和消费电子的电源管理模块
  • 电机驱动与工业电源系统(在合适热设计下)

五、封装与选型提示

该器件为表面贴装 TSDSON-8(PowerTDFN 8),适合回流焊工艺。设计时应关注散热路径(基板热过孔和铜箔面积)以发挥额定 40 A 和 69 W(Tc)能力;驱动电压建议在 10 V 水平以获得标称低 Rds(on),注意不要超过 ±20 V 的栅压限制。

如需更详细的参数曲线与封装机械图,请参考英飞凌官方器件数据手册以完成最终电路设计与热仿真验证。

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