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Infineon BSZ15DC02KDHXTMA1
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon BSZ15DC02KDHXTMA1
- Type
- INFINEON
- Minimum package
- 5000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- BSZ15DC02KDHXTMA1
- Electronic Component
- 1
- Package
- TSDSON-8
- Electronic Component
- 1 N +1 P
- Type
- N +P
- Electronic Component
- MOSFET
- Electronic Component
- 0.25g
- Electronic Component
- 1
- Electronic Component
- BM0000861934
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 2.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSZ15DC02KDHXTMA1 产品概述
一、概览
BSZ15DC02KDHXTMA1 是英飞凌（Infineon）推出的一款高温等级双MOSFET 器件，内部集成 1 个 N 沟道与 1 个 P 沟道晶体管，适用于 20V 级别的低压电源管理与开关应用。器件工作温度范围宽（-55℃ 至 +175℃），在小封装下兼顾开关性能与散热能力，适合空间受限且需高可靠性的工业和汽车电子场景。
二、主要特性
- 双晶体管结构：1×N 沟道 + 1×P 沟道，便于实现互补设计（高侧/低侧、负载开关等）。
- 耐压：漏源电压 Vdss = 20V，适用于常见的 12V/24V 边缘及电池供电系统。
- 宽温度等级：工作温度 -55℃ 至 +175℃，适合高温/严苛环境。
- 小封装：TSDSON-8，低寄生电感、良好热性能与 PCB 兼容性。
三、电气参数（按顺序对应 N 沟道 / P 沟道）
- 导通电阻 RDS(on)（@4.5V）：150 mΩ / 55 mΩ
- 连续漏极电流 Id：3.2 A / 5.1 A
- 漏源电压 Vdss：20 V（共用规格）
- 阈值电压 Vgs(th)（@110 μA）：1.0 V / 1.1 V
- 总栅极电荷 Qg（@4.5V）：3.0 nC / 2.1 nC
- 输入电容 Ciss：270 pF / 315 pF
- 输出电容 Coss：110 pF / 114 pF
- 反向传输电容 Crss：94 pF / 16 pF
- 功耗 Pd（封装极限）：2.5 W
（注：上表数值以器件规格书提供的顺序列出，设计时请以正式数据手册的典型值与限制值为准。）
四、封装与热性能
TSDSON-8 小型封装利于高密度 PCB 布局，封装内置热垫利于通过底部焊盘散热。推荐在 PCB 设计中使用多层铜铺地与过孔热通道以提升散热能力，并注意靠近热源布置散热铜箔，保证 Pd 限值下稳定工作。
五、典型应用与设计建议
- 典型应用：便携设备电源管理、负载开关、双向电流控制、模拟开关、低压 DC-DC 同步整流或互补推挽电路。
- 驱动与布局建议：
- 以 4.5V 门极驱动为设计参考，结合阈值电压选择合适的驱动电平以保证导通损耗与开关损耗的平衡。
- 在开关应用中考虑栅极电荷 Qg 对驱动电流的要求，适当选用驱动器或串联栅极电阻以抑制振铃。
- 对于功率路径使用足够宽的铜箔和多个过孔，降低寄生电阻与提升热散逸。
六、注意事项与替代策略
- 由于器件为双晶体管集成，若只需单一通道应注意另一通道的悬空处理或并联限制。
- 在高频开关场景下，Coss/Crss 对开关损耗影响明显，需在系统层面计算开关能耗并做好滤波/缓冲。
- 若需要更低 RDS(on) 或更高电流能力，可在英飞凌同系产品中查找更高规格的单通道 MOSFET 作并联或替代。购买与样片信息请参考 Infineon 正式渠道与数据手册。
如需基于具体应用（例如同步降压转换器或高侧负载开关）的电路参考、热仿真或 PCB 布局建议，可提供系统工作电压、开关频率与目标效率，我可进一步给出针对性的设计要点。
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