WMSIC Electronic Components

Infineon BSC150N03LDGATMA1

ModelBSC150N03LDGATMA1
PackageTDSON-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon BSC150N03LDGATMA1
Type
INFINEON
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSC150N03LDGATMA1
Electronic Component
1
Package
TDSON-8
Electronic Component
2 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.44g
Electronic Component
1
Electronic Component
BM0058432628
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
26W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSC150N03LDGATMA1 产品概述

一、概述

BSC150N03LDGATMA1 是英飞凌(Infineon)推出的一款双通道 N 沟道功率 MOSFET,采用 TDSON-8 封装。器件面向中低压、高效率开关应用,提供低导通电阻与较低的寄生电容,适合开关转换、同步整流和功率管理等场合。器件工作温度范围宽(-55℃ ~ +150℃),适用于严苛环境与工业级产品设计。

二、主要参数

  • 漏源峰值电压(Vdss):30 V
  • 通道数量:2 个 N 沟道
  • 导通电阻(RDS(on)):15 mΩ @ VGS = 10 V
  • 连续漏极电流(Id):20 A(额定条件)
  • 耗散功率(Pd):26 W
  • 栅极阈值电压(VGS(th)):2.2 V @ 250 µA
  • 总栅极电荷(Qg):13.2 nC @ 10 V
  • 输入电容(Ciss):1.1 nF
  • 输出电容(Coss):470 pF
  • 反向传输电容(Crss / Crss):16 pF
  • 工作温度:-55℃ ~ +150℃
  • 封装:TDSON-8

三、电气与开关特性说明

器件在 VGS = 10 V 时可达到 15 mΩ 的低 RDS(on),适合在有充分栅极驱动的系统中作为低损耗开关使用。Qg 为 13.2 nC,提示在高频开关应用中栅极驱动能量与开关损耗需被考虑;Ciss(1.1 nF)与 Coss(470 pF)反映开关时的电荷分布与回灌行为,Crss(16 pF)决定米勒效应对开关过渡的影响。

四、热性能与封装优势

TDSON-8 封装提供较小的封装尺寸与良好的导热路径,适合对 PCB 散热设计有要求的应用。额定功耗 26 W 在良好散热条件(焊盘/散热通孔或散热片)下可发挥最大性能。设计时应确保底部散热焊盘足够,最小化 PCB 温升以保持器件可靠性。

五、典型应用场景

  • 同步整流与降压 DC-DC 转换器
  • 电源管理与负载开关
  • 电机驱动与桥式拓扑(双通道便于半桥设计)
  • 汽车与工业电源模块(考虑宽温度与高可靠性)

六、设计与布局建议

  • 栅极驱动:为获得最低 RDS(on),建议提供 VGS = 10 V 的驱动电压,必要时在栅极串联小电阻以抑制振铃。
  • 开关损耗:考虑 Qg 与 Coss,计算驱动能量与开关损耗,必要时采用缓冲/死区时间优化。
  • PCB 布局:保证大面积散热焊盘、缩短电流回路、在开关节点处使用适当的旁路电容,减小寄生电感。
  • 热保护:在高功率工作点建议布局热测点或温度保护策略,确保长期可靠性。

七、总结

BSC150N03LDGATMA1 以其 30 V 额定电压、低 RDS(on) 与双通道 TDSON-8 封装,适合要求体积小、效率高且需双通道配合的电源与驱动应用。设计时需权衡栅极驱动能力、开关频率与 PCB 散热,以发挥器件最佳性能。

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