WMSIC Electronic Components

Infineon BSP322PH6327XTSA1

ModelBSP322PH6327XTSA1
PackageSOT-223
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon BSP322PH6327XTSA1
Type
INFINEON
Unit
Electronic Component
Minimum package
1000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSP322PH6327XTSA1
Electronic Component
1
Package
SOT-223
Electronic Component
MOSFET
Electronic Component
MOSFET
Electronic Component
0g
Electronic Component
1
FET Type
P
Electronic Component
BM0058413572
Type
Surface Mount
Operating Temperature
55°C ~ 150°C(TJ)
Package / Housing
TO-261-4,TO-261AA
Vgs
±20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSP322PH6327XTSA1 产品概述

一、概述

BSP322PH6327XTSA1 为英飞凌(Infineon)推出的一款 P 通道小信号 MOSFET,采用 MOS 技术并提供高达 100V 的漏源耐压(Vdss)。该器件以 SOT-223(PG‑SOT223‑4 / TO‑261‑4)表面贴装封装为主,面向汽车和工业应用,适合需要高压耐受、低电流控制和开关功能的场合。

二、主要特性

  • 漏源电压 Vdss:100 V,适用于高压侧开关与保护电路。
  • 连续漏极电流 Id:1 A(在 TC 条件下)。
  • 导通电阻 Rds(on):最大 800 mΩ @ Id=1 A、Vgs=10 V(规格亦给出 Vgs=4.5 V 的对应 Rds(on) 数据)。
  • 栅阈电压 Vgs(th):最大 1 V @ Ig=380 µA,便于低电压驱动识别导通状态。
  • 总栅电荷 Qg:最大 16.5 nC @ Vgs=10 V,需考虑驱动功率与开关损耗。
  • 输入电容 Ciss:最大 372 pF @ Vds=25 V。
  • 最大栅极电压:±20 V(栅极需受限于此值)。
  • 功率耗散 Pd:1.8 W(Ta),结温工作范围 TJ:‑55°C 至 150°C。

三、电气参数与封装

  • 封装类型:表面贴装 SOT‑223(供应商标注 PG‑SOT223‑4 / TO‑261‑4)。
  • 小型封装有利于 PCB 面积节约,但热阻较大,需在 PCB 设计中注意散热铜箔与散热路径布置。
  • 规格数据适合小信号高压开关场景,功率耗散在无外部散热时受限。

四、典型应用

  • 高边开关 / 电源选择开关(高压负载断开)
  • 汽车车身控制单元(BCU)、ADAS 电源管理与保护
  • LED 驱动与照明控制(高压串联场合)
  • 开关电源(SMPS)中的高压侧控制与保护电路
  • 小型电机驱动中的高压逻辑开关

五、使用与布局建议

  • 栅极驱动:P 沟道器件在高边作为开关使用时,需将栅极比源极更负(注意极性),且限制在 ±20 V 内;推荐在栅极串联适当阻值及并联 TVS 或钳位网络以保护栅极。
  • 开关损耗:Qg=16.5 nC 表明在高频开关时门极驱动电流不可忽视,应评估驱动器峰值能力与功耗。
  • 热管理:Pd=1.8 W(Ta)且封装体积小,应通过加大 PCB 铜箔面积、铺设散热层或热过孔来降低结温,避免长期高功耗工作。
  • 布局:缩短栅极至驱动器回路,增大源‑接地/散热铜箔,注意寄生电感以降低开关过冲。

六、选型建议

若目标为高压低至中等电流、需在有限空间内实现高边开关或保护,BSP322PH6327XTSA1 为合适选择。若需要更低 Rds(on) 或更大连续电流,应考虑更大功率或更低阻值的器件并配合更强散热方案。

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