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Infineon SPD06N80C3ATMA1
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon SPD06N80C3ATMA1
- Type
- INFINEON
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- SPD06N80C3ATMA1
- Electronic Component
- 1
- Package
- TO-252-3(DPAK)
- Electronic Component
- MOSFET
- Electronic Component
- MOSFET
- Electronic Component
- 0g
- Electronic Component
- 1
- FET Type
- N
- Electronic Component
- BM0264679611
- Type
- Surface Mount
- Operating Temperature
- 55°C ~ 150°C（TJ）
- Package / Housing
- TO-252-3, DPak, SC-63
- Vgs
- ±20V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SPD06N80C3ATMA1 场效应管（MOSFET）产品概述
一、核心身份与品牌背景
SPD06N80C3ATMA1是英飞凌（Infineon） 推出的N沟道金属氧化物半导体场效应管（MOSFET），属于中高压功率器件范畴。英飞凌作为全球功率半导体领域的领先厂商，该型号延续了品牌在功率器件上的可靠性与性能均衡性优势，专为需要高电压耐量、稳定功率传输的电子电路设计。
二、关键电气参数解析
该器件的核心参数决定了应用边界与性能表现，关键指标如下：
- 电压耐量：漏源极击穿电压（Vdss）达800V，可覆盖中高压电路（如230VAC市电应用）的电压需求；栅源极最大电压（Vgs）±20V，允许较宽驱动电压范围，降低驱动电路设计难度。
- 电流能力：25℃环境温度下，连续漏极电流（Id）为6A；最大壳温功率耗散（Tc）83W，支撑中等功率密度设计；栅极阈值电压（Vgs(th)）最大值3.9V（@250μA），低驱动电流即可导通。
- 开关与导通特性：导通电阻（Rds(on)）最大值900mΩ（@3.8A、10V Vgs），中高压MOSFET中损耗合理；栅极电荷（Qg）最大值41nC（@10V Vgs），开关损耗适中，适配一定频率的开关应用；输入电容（Ciss）最大值785pF（@100V Vds），电容特性稳定，利于EMI控制。
- 温度适应性：工作结温（TJ）范围-55℃至150℃，覆盖工业级宽温需求，极端环境下仍稳定运行。
三、物理封装与安装特性
采用表面贴装型TO-252-3封装（DPak，2引线+接片、SC-63规格），特点如下：
- 尺寸紧凑，适配高密度PCB布局，节省电路空间；
- 接片设计增强散热能力，配合表面贴装工艺，便于自动化生产；
- 引脚布局清晰，焊接可靠性高，降低生产不良率。
四、典型应用场景
基于800V耐量、6A电流及均衡的开关/导通性能，适用于：
- AC-DC开关电源：PFC（功率因数校正）或DC-DC变换电路的功率开关，支撑中高压输入转换；
- 小型光伏逆变器：户用光伏系统的功率调节与逆变环节，适配光伏板中高压输出；
- 电机驱动电路：小型直流/无刷电机的驱动开关，满足中等功率电机控制需求；
- 工业控制电路：PLC功率输出模块、继电器替代电路等，利用宽温特性适应工业环境。
五、性能优势总结
该型号核心优势：
- 电压功率均衡：800V耐量匹配中高压应用，6A电流覆盖中等功率，无需过度选型；
- 驱动兼容性：±20V Vgs范围、3.9V阈值电压，兼容多种驱动芯片，简化设计；
- 可靠性与宽温：英飞凌工艺保障，-55℃至150℃结温，适应严苛环境；
- 封装适配性：TO-252-3封装兼顾散热与空间，适合批量生产与小型化设计。
综上，SPD06N80C3ATMA1是一款性能均衡的中高压N沟道MOSFET，适用于工业与消费电子领域的多种功率传输场景，是实用且可靠的选型方案。
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