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Infineon IRL530NSTRLPBF
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IRL530NSTRLPBF
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 800 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRL530NSTRLPBF
- Electronic Component
- 1
- Package
- TO-263-2
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 2.028g
- Electronic Component
- 1
- Electronic Component
- BM0209680664
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 79W
- Electronic Component
- Electronic Component
- Electronic Component
- 800
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IRL530NSTRLPBF 产品概述
一、概述
IRL530NSTRLPBF是一颗100V额定电压、N沟道功率MOSFET，来自Infineon（英飞凌）。器件为逻辑电平型，适合以较低门极电压驱动的开关场合。工作温度范围宽（-55℃~+175℃），单片数量1个，封装为TO-263-2（常见D2PAK型散热面向PCB），适用于对体积和散热有要求的功率电路。
二、主要电气参数
- 漏源电压 Vdss：100V
- 连续漏极电流 Id：17A（实际允许电流依散热条件而定）
- 导通电阻 RDS(on)：150mΩ @ Vgs=4V, Id=8.0A（低电平门驱特性）
- 门限电压 Vgs(th)：2V @ 250µA（逻辑电平触发）
- 功耗 Pd：79W（额定耗散，需结合散热设计）
- 输入/输出/反向传输电容：Ciss=800pF，Coss=160pF，Crss=90pF
三、关键特性与优势
- 逻辑电平驱动：在4V门极电压下已具备较低导通电阻，方便与微控制器或低压驱动器直接配合。
- 中高压能力：100V规格适合常见开关电源、升压、逆变等中高压应用。
- 宽温度范围：-55℃~+175℃支持工业级及高温工况，可靠性强。
- 合理的输入/输出电容值：兼顾开关速度与dv/dt抗扰性，适用于中高频率开关场景。
四、典型应用
- 开关电源（中低功率变换器、升压/反激前端）
- 负载开关与逆变器前端
- 电机驱动（驱动级或半桥模块的开关元件，需考虑并联/散热）
- 工业控制与电子开关
五、使用与设计建议
- 门极驱动：尽管为逻辑电平型，仍应尽量保证稳定的Vgs驱动（推荐短脉冲下尽量达到或超过4V以降低RDS(on)）。
- 开关瞬态处理：Crss（90pF）会产生米勒效应，快速切换时需配合合适的栅极电阻以抑制振铃和过冲。
- 散热设计：器件Pd为79W，但实际损耗受RDS(on)和电流影响，务必通过铜箔散热、热垫或散热器评估结温，避免长期高结温工作。
- 感性负载保护：驱动感性负载时应采用续流二极管或RC吸收网络，防止高压反向冲击。
六、封装与机械、可靠性注意
- 封装：TO-263-2（D2PAK），适合表面贴装与PCB散热方案，便于大电流和热流路径设计。
- 焊接与装配：遵循器件制造商的焊接与回流曲线，注意机械应力和热循环对可靠性的影响。
七、结语
IRL530NSTRLPBF在100V电压等级与逻辑电平驱动下，提供了平衡的导通电阻、耐压能力与热稳定性，适合多种工业与电源开关场景。最终电路性能依赖于门极驱动、开关频率与散热实现，推荐在样机阶段进行热仿真与电路验证。
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