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ON BSS123LT1G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON BSS123LT1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- BSS123LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0093065321
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSS123LT1G 产品概述
一、基本信息
BSS123LT1G 是一种 N 通道 MOSFET（金属氧化物半导体场效应晶体管），属于 ON Semiconductor（安森美）的产品系列，采用 SOT-23-3 (TO-236) 表面贴装封装。该器件具有较高的漏源电压（Vdss）和较高的连续漏极电流，这使其在各种高压、大电流应用场合下表现优异。
二、技术规格
- FET 类型: N 通道
- 漏源电压（Vdss）: 100 V
- 连续漏极电流（Id）: 170 mA (在 25°C 时)
- 驱动电压（Vgs）: 最大 Rds On 时为 10V
- 导通电阻（Rds(on)）: 在 Id=100 mA，Vgs=10V 时，最大值为 6 Ω
- 阈值电压（Vgs(th)）: 最大值为 2.6 V（范畴适用测试条件为 Id=1 mA）
- 栅极-源极电压（Vgs）: 最大值为 ±20 V
- 输入电容（Ciss）: 最大值为 20 pF（在 Vds=25 V 时）
- 功率耗散: 最大值为 225 mW（在环境温度下）
- 工作温度范围: -55°C 至 150°C
- 封装类型: SOT-23-3（TO-236）
三、应用场合
BSS123LT1G 在电子设计中应用广泛，适用于如下领域：
- 电源管理: 由于其高电压和电流承载能力，BSS123LT1G 可用于开关电源（SMPS）与电压稳压器电路。其良好的导通特性和低导通电阻使其在高效能电源设计中表现突出。
- 信号开关: 该 MOSFET 可用于低功耗信号的切换，实现信号的高效传输和频率控制。
- 负载驱动: 在各类负载驱动电路中，尤其是小功率负载，BSS123LT1G 可实现精确的电流控制和增强的驱动能力。
- 便携设备: 鉴于其小型化的 SOT-23 封装，该 MOSFET 适用于空间要求严格的便携式设备中，如手持式电子产品、移动电子设备等。
四、优势与特点
- 高温稳定性: 面对较大温度变化，BSS123LT1G 的工作温度范围为 -55°C 至 150°C，适用于严苛的工作环境，能够有效保持器件的性能稳定。
- 低导通电阻: 最大导通电阻为 6 Ω，可以在较低的驱动电压条件下实现高效的电流传输，减少功率损耗。
- 小型封装: SOT-23-3 封装使其在高度集成的电路中具有极大的空间优势，也便于自动化生产和简化焊接流程。
- 应用灵活性: 支持多种类型的电路设计，能够满足不同客户的需求，适合多种行业。
五、总结
BSS123LT1G 作为一款高性能 N 通道 MOSFET，凭借其优越的电气特性和广泛的应用范围，成为电子设计工程师的理想选择。无论是在电源管理、信号开关，还是在便携设备的负载驱动中，该元件都能提供可靠的解决方案，助力实现高效能和高可靠性的电子产品设计。选择 BSS123LT1G，您将获得性能和品质兼具的优秀MOSFET解决方案。
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