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ON MUN5335DW1T1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON MUN5335DW1T1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MUN5335DW1T1G
- Electronic Component
- 1
- Package
- SOT-363
- Electronic Component
- 1 NPN, 1 PNP
- Electronic Component
- Digital Transistor
- Electronic Component
- 0.027g
- Electronic Component
- 1
- Electronic Component
- BM0209279768
- Operating Temperature
- 55℃~+150℃
- Resistor
- 0.047
- Resistor
- 2.2kΩ
- Transistor Type
- NPN+PNP
- Power Dissipation(Pd)
- 187mW
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MUN5335DW1T1G 产品概述
简介 MUN5335DW1T1G 是一款集成数字晶体管，采用SOT-363封装形式，专为实现高效的电子信号放大和开关控制而设计。产品包含1个NPN和1个PNP晶体管，具有预偏压功能，广泛应用于数字电路、信号放大、开关电源和其他需要快速切换和放大的场合。
关键规格参数
电流和电压特性:
- 集电极电流（Ic）最大值: 100mA，适合大多数中小负载。
- 集射极击穿电压（Vce_max）: 50V，满足很多高电压应用要求。
- 集电极截止电流（Ic_off）最大值: 500nA，提供低泄漏特性。
增益特性:
- 在5mA的基极电流和10V的集射电压条件下，DC电流增益（hFE）最小为80，这保证了信号的有效放大。
饱和压降:
- 在300µA的基极电流和10mA的集电极电流下，Vce饱和压降最大为250mV，确保在开关状态下损耗最小，从而提高电路效率。
功率输出:
- 最大功率输出为250mW，能够满足大部分日常电路设计需求。
电阻特性:
- 基极电阻（R1）为2.2kΩ，发射极电阻（R2）为47kΩ，提供良好的电流控制。
封装和安装:
- MUN5335DW1T1G 采用6-TSSOP, SC-88, SOT-363封装，属于表面贴装型设计，适合现代小型电路板的紧凑布局。
应用场景 MUN5335DW1T1G广泛应用于数字信号处理、高频开关电路、低功耗放大器、传感器驱动和负载开关等众多领域。由于其较低的功耗和良好的增益特性，尤其适合于手持设备、智能家居、汽车电子及各种消费电子产品中需要快速开关和信号处理的场景。
性能优势
- 高集成度: 此产品将两个通用型号的晶体管集成于一个小型封装内，降低了电路空间占用并提高了系统的可靠性。
- 优良的开关速度: 由于内部结构优化，该组件支持高频操作，适用于要求快速响应的应用中。
- 低功耗: 设计上的高效性确保在运行中耗电较低，非常适合对电源管理有较高要求的设备。
总结 MUN5335DW1T1G是一款具有优秀性能和广泛应用潜力的数字集成晶体管，适合各类现代电子设备使用。凭借其合理的规格和紧凑的封装设计，电子工程师可以在多种电路中轻松实现集成与高效能，从而加速新产品的开发周期并降低设计成本。作为安森美电子的一款出色产品，MUN5335DW1T1G无疑是许多项目的理想选择。
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