WMSIC Electronic Components

ON MM3Z62VB

ModelMM3Z62VB
PackageSOD-323F
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ON MM3Z62VB
Type
ON
Minimum package
3000

Technical parameters

Electronic Component
ON
Electronic Component
MM3Z62VB
Electronic Component
1
Package
SOD-323F
Electronic Component
Zener Diode
Electronic Component
0.03g
Electronic Component
1
(Zzk)
423Ω
(Zzt)
202Ω
Electronic Component
BM0264369327
Diode
1
Power Dissipation(Pd)
200mW
Electronic Component
60.76V~63.24V
Electronic Component
3000
Electronic Component
62V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MM3Z62VB 产品概述

一、产品简介

MM3Z62VB 是安森美(ON Semiconductor)推出的一款独立式稳压二极管(齐纳二极管),标称稳压值为 62V。该器件采用 SOD-323F(SOD-323FL)小型封装,适合在空间受限且要求稳压参考或小功率钳位的电路中作为高压低功耗的电压参考或保护元件使用。

二、主要参数

  • 二极管配置:1 个独立式
  • 稳压值(标称):62V
  • 稳压值范围:60.76V ~ 63.24V
  • 反向电流(Ir):45 nA @ 43.4V
  • 耗散功率(Pd):200 mW(器件总耗散上限)
  • 稳压阻抗(Zzt):202 Ω
  • 膝部阻抗(Zzk):423 Ω
  • 封装:SOD-323F(SOD-323FL)
  • 品牌:ON(安森美)

三、特性与优势

  • 高稳压值:62V 的稳压点适用于较高电压参考或小电流隔离保护场合。
  • 低反向漏电:在 43.4V 条件下反向电流仅 45 nA,适合低漏电要求的电路设计。
  • 小巧封装:SOD-323F 封装体积小,便于高密度 PCB 布局和表面贴装组装。
  • 低功耗工作:最大耗散功率为 200 mW,适用于小电流稳压或作为零星电压钳位元件。
  • 明确的阻抗特性:Zzt 与 Zzk 给出器件在稳压区及膝部的动态阻抗,便于进行精确的电路分析与仿真。

四、典型应用场景

  • 小电流基准电压源与参考电路(低功耗传感器、便携设备)
  • 高压小功率钳位与浪涌保护(对尖峰电压进行限制)
  • 测试与测量设备中用作高压参考或保护元件
  • 通信、仪表等对漏电敏感的低电流场合

五、封装与热管理建议

SOD-323F 为塑封表贴封装,封装致热能力有限。使用时应注意:

  • 避免在靠近耗散上限(200 mW)长期工作;若需接近此功率,采取 PCB 散热措施(增加铜铺、加大焊盘面积)。
  • 在高温环境下应做功率降额处理,根据系统环境温度适当降低允许耗散。
  • 由于封装热阻较大,瞬态浪涌能量或长时间大电流条件下需谨慎,避免热失稳。

六、典型电路与使用注意事项

  • 作为齐纳稳压器使用时通常串联限流电阻以控制稳压电流,限流电阻和电源电压应保证在任何工作状态下稳压二极管的耗散功率不超过 200 mW。
  • 注意反向漏电随温度上升而增加,在高温或高精度测量场合需考虑温度系数与偏差。
  • Zzt 与 Zzk 反映动态响应特性:在需要低噪声、高精度参考的场合应结合阻抗特性选取合适的工作电流和滤波方案。
  • 建议在电路设计中预留 ESD 或浪涌保护元件,避免超过器件最大反向电压或瞬态能量。

七、替代型号与选型建议

在选型时若需要相近稳压值或不同功率等级,可参考安森美或其他厂商同类系列的齐纳二极管;选型要点包括稳压值容差、最大功耗、反向漏电、动态阻抗以及封装形式。对于要求更高功耗或更低阻抗的场合,建议选择功率更高或专用参考源件。

如需进一步的典型曲线数据、绝对最大额定值或封装尺寸图纸,可参考 ON Semiconductor 的 MM3Z62VB 器件数据手册或联系供应商获取详细规范文件。

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