WMSIC Electronic Components

ON MC33074ADR2G

ModelMC33074ADR2G
PackageSOIC-14
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON MC33074ADR2G
Type
ON
Unit
Electronic Component
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
MC33074ADR2G
Electronic Component
1
Package
SOIC-14
Electronic Component
FET-Input Op Amp
Electronic Component
0.25g
Electronic Component
1
Features
Load Driver; ESD
Electronic Component
BM0058428157
Operating Temperature
40℃~+85℃
Amplifier
Electronic Component
Output Current
30mA
(SR)
13V/us
Power Supply Voltage
3V~44V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MC33074ADR2G 产品概述

一、产品概述

MC33074ADR2G 是安森美(ON Semiconductor)提供的一款四路 FET 输入运算放大器,专为低噪声、高共模抑制和宽供电电压设计。器件在小型 SOIC-14 封装内集成四个独立放大器,适用于多通道、空间受限的模拟前端方案,兼顾低失调和较高带宽/压摆率性能。

二、主要特性

  • 共模抑制比(CMRR):97 dB,保证差分信号下的干扰抑制能力。
  • 输入噪声密度(eN):32 nV/√Hz @1 kHz,适合对噪声敏感的信号链。
  • 输入失调电压(Vos):500 μV,低失调降低校准负担。
  • 输入偏置电流(Ib):100 nA,输入为 FET 型,适合高阻抗传感器接口。
  • 增益带宽积(GBP):4.5 MHz,适用于中等带宽的放大与滤波。
  • 压摆率(SR):13 V/μs,支持快速信号边沿处理。
  • 单电源工作范围:3 V 至 44 V(最大电源差 44 V),灵活匹配单/双电源系统。
  • 静态电流(Iq):1.9 mA(每通道),输出电流高达 30 mA。
  • 输入失调电压温漂(Vos TC):10 μV/℃;输入失调电流(Ios):50 nA。
  • 工作温度范围:-40 ℃ 至 +85 ℃。

三、电气性能摘要

该器件兼具低噪声与较高抑制比,适合精密测量与信号恢复。FET 输入结构带来的低偏置电流配合低失调电压温漂,有利于长时间稳定测量。4.5 MHz 的 GBP 与 13 V/μs 的压摆率可满足滤波器、缓冲和驱动中等频率信号的需求。

四、典型应用

  • 工业与仪器仪表的模拟前端(传感器放大、差分测量)。
  • 音频前置放大与低噪声拾音电路。
  • 信号调理与主动滤波(低通/高通/带通)。
  • 数据采集输入缓冲、ADC 驱动。
  • 低压/高压混合供电系统中多通道放大需求。

五、封装与可靠性

MC33074ADR2G 提供 SOIC-14 封装,便于表面贴装与自动化生产。工作温度覆盖工业级范围(-40 ℃ 至 +85 ℃),满足多种工业与消费类应用的环境要求。

六、设计与布局建议

  • 电源去耦:靠近器件引脚放置 0.1 μF 陶瓷电容与适当的电解电容以保证低频稳定。
  • 输入滤波:对高阻抗传感器输入建议添加高阻抗旁路或 RC 低通以抑制射频干扰。
  • 布线:差分信号走线成对并缩短回路面积,模拟地与数字地分离并在单点连接。
  • 热管理:虽然静态功耗低,但在高密度布板或高温工况下注意散热布局。

七、采购与替代

品牌:ON(安森美),型号:MC33074ADR2G,封装:SOIC-14。设计时可同时评估功能相近的其它四路 FET 输入放大器以备选,但在替换时需注意输入结构、带宽、失调与供电范围的匹配,避免性能退化。

如需针对具体电路(如差分放大、滤波或 ADC 驱动)给出参考原理图或元件选型建议,可提供电路要求与工作条件,我将给出更详细的设计方案。

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