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ON FDD5N50NZTM
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ON FDD5N50NZTM
- Type
- ON
- Minimum package
- 2500
Technical parameters
- Electronic Component
- ON
- Electronic Component
- FDD5N50NZTM
- Electronic Component
- 1
- Package
- TO-252AA
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.372g
- Electronic Component
- 1
- Electronic Component
- BM0228786092
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 62W
- Electronic Component
- 2500
- Voltage(Vdss)
- 500V
- Capacitor(Ciss)
- 440pF
- Gate (Qg)
- 12nC@10V
- Resistor(RDS(on))
- 1.38Ω@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
FDD5N50NZTM 产品概述
一、产品简介
FDD5N50NZTM 为 ON (安森美) 出品的一款 N 沟道高压场效应管，单只器件适合高电压、低至中等电流应用。器件关键参数：Vdss=500V，连续漏极电流 Id=4A，最大耗散功率 Pd=62W（封装与散热条件相关），适用于离线开关和高压开关场合。
二、主要电气特性
- 漏源耐压：500V，可承受较高的脉冲与直流电压。
- 连续漏极电流：4A，适合中小功率负载。
- 导通电阻 RDS(on)：1.38Ω（Vgs=10V），导通损耗在较大电流下不可忽视。
- 门阈电压 Vgs(th)：约3V，需将门极驱动提升至 10V 以保证导通性能。
- 总门极电荷 Qg：約12nC（10V），与 Ciss=440pF 一并反映开关驱动能量需求。
三、封装与热管理
封装为 TO-252AA（DPAK）表面贴装，适合自动化 PCB 工艺。标称 Pd=62W 为良好散热条件下的理论值，实际使用时需关注封装到 PCB 的热阻、焊盘铜箔面积及散热路径。建议在高功率或连续工作场景增加散热铜箔、热过孔或金属散热片，并合理布置器件以降低结温。
四、开关与驱动考虑
Qg=12nC 与 Ciss=440pF 表明开关时需要一定驱动能量，驱动器需能提供足够电流以获得期望的开关速度。为减少振铃与电磁干扰，建议在门极串联小阻抗并适当使用 RC 缓冲或 TVS 保护。由于 RDS(on) 较大，导通损耗为主要损耗项，应在设计中评估 Id^2·RDS(on) 带来的热升高。
五、典型应用场景
适用于：离线开关电源（高压侧开关或辅助回路）、反激/前馈变换器、照明镇流/电子镇流器、脉冲发生器及其他需要 500V 耐压但电流不大的开关场合。对需要低导通损耗的高电流应用则不优选。
六、选型与使用建议
- 确认最大工作电流与导通损耗是否在可接受范围；若连续电流接近 4A，应优先考虑并联或选择更低 RDS(on) 的器件。
- 保证门极驱动达到 10V 以发挥参数所示性能；若使用逻辑电平驱动，需评估开关与导通特性。
- 加强 PCB 散热设计，尤其是在高占空比或连续导通工况下。
- 设计中纳入过压、过热保护与缓冲网络，防止因脉冲或反向尖峰损坏器件。
总结：FDD5N50NZTM 在 500V 等级中提供了一种成本与性能平衡的选择，适合高压低至中等电流的开关场合。合理的驱动与散热设计是确保其可靠工作和延长寿命的关键。
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