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TI TPD1E0B04DPLR
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TI(Texas Instruments) TPD1E0B04DPLR
- Type
- TI
- Minimum package
- 15000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TI(Texas Instruments)
- Electronic Component
- TPD1E0B04DPLR
- Electronic Component
- 1
- Package
- X2-SON-2(0.3x0.6)
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.012g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 0.13pF
- Electronic Component
- BM0266035160
- Operating Temperature
- 40℃~+125℃
- Voltage
- 19V
- Electronic Component
- IEC 61000-4-2；IEC 61000-4-4；IEC 61000-4-5
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TPD1E0B04DPLR 产品概述
一、简介
TPD1E0B04DPLR 是德州仪器（TI）推出的一款单路双向静电和浪涌保护器（ESD/TVS），专为对信号完整性和低漏电有严格要求的接口保护而设计。器件封装为 X2-SON-2 (0.3 × 0.6 mm)，适合空间受限的应用板级保护。
二、主要电气参数
- 钳位电压（Vclamp）：19 V（典型，8/20 μs 浪涌）
- 峰值脉冲功率（Ppp）：15 W @ 8/20 μs
- 峰值脉冲电流（Ipp）：1.7 A @ 8/20 μs
- 反向截止电压（Vrwm）：3.6 V（直流工作电压上限）
- 击穿电压（Vbr）：6.7 V
- 结电容（Cj）：0.13 pF（极低电容，利于高频信号线）
- 反向电流（Ir）：10 nA（小漏电，有利于低功耗系统）
- 通道数：单路；极性：双向
- 工作温度：-40 ℃ 至 +125 ℃
三、特性与优势
- 极低结电容（0.13 pF）：对高带宽、高速差分或单端信号影响极小，适合保护高速接口而不破坏信号完整性。
- 双向保护：无需方向区分，适用于交流或双向数据线。
- 小封装：X2-SON-2 小型封装利于贴近连接器或芯片引脚布局，缩短保护回路，提高抑制效果。
- 容量级别的漏电流极小（10 nA）：适用于电池供电或对静态电流敏感的系统。
- 符合 IEC 61000-4-2/-4/-5 标准：对静电放电、快速瞬变和浪涌具有良好抑制能力。
四、典型应用场景
- 移动设备与可穿戴电子中对单路高频接口的保护
- 通讯端口、I/O 接口和传感器线路的板级防护
- USB、串行接口、差分数据链路等需要低电容保护的信号线
- 工业控制和汽车电子中的局部信号保护（在温度范围内使用）
五、布局与设计注意事项
- 尽量将器件放置在受保护引脚与连接器之间，靠近被保护端以缩短回路感抗。
- 对于较大能量的浪涌保护，注意周围走线与接地回流路径的合理设计，以提升吸收效率。
- 选型时确认 Vrwm（3.6 V）高于系统正常工作电压，避免误触发；若用于更高工作电压的线路，应选择对应 Vrwm 更高的器件。
- 小封装在回流焊工艺下有良好可靠性，但注意处理期间的静电防护与焊接温度规范。
六、总结
TPD1E0B04DPLR 以其低结电容、低漏电流、小封装及满足 IEC 抗扰标准的特性，适合对信号完整性和空间有较高要求的单路保护场景。设计时应关注 Vrwm 与系统电压匹配、器件布局及接地回路，以发挥最佳防护性能。
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