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1SV305(TPH3,F) 1SV305
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA 1SV305(TPH3, F)
- Type
- TOSHIBA
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- 1SV305(TPH3,F)
- Electronic Component
- 1
- Package
- SOD-523
- Electronic Component
- Varactor Diode
- Electronic Component
- 0.019g
- Capacitor
- 3@C1V/C4V
- Electronic Component
- 1
- Electronic Component
- BM0266192065
- Diode
- Electronic Component
- Resistor(Rs)
- 270mΩ
- Current(Ir)
- 3nA@10V
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
- Diode Capacitor(CT)
- 6.1pF@4V,1MHz
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1SV305 (TPH3,F) — 变容二极管产品概述
一、主要特性
1SV305 是东芝（TOSHIBA）推出的独立式变容二极管，封装为超小型SOD-523，适合体积受限的表面贴装电路。该器件在反向偏置下呈电容可变特性，适用于高频调谐与频率合成应用。器件具有低串联电阻和极小的反向漏电流，有利于提高谐振回路的品质因数和频率稳定性。
二、关键电气参数
- 直流反向耐压（Vr）：10 V（最大反向偏置电压，不可长期超越）
- 反向电流（Ir）：3 nA @ 10 V（低漏电，有利于小信号下的稳定性）
- 二极管电容（CT）：6.1 pF @ 4 V, 1 MHz（标定条件为1 MHz）
- 电容比：3 (C@1V / C@4V)，据此可计算 C@1V ≈ 18.3 pF（即在1 V时电容约为4 V时的3倍）
- 串联电阻（Rs）：270 mΩ（0.27 Ω，极低的等效串联电阻，有助于提高谐振回路Q值）
三、典型应用场景
- 射频调谐电路（如电视信号调谐、射频前端微调）
- 压控振荡器（VCO）和频率合成器中的可变电容元件
- 自动增益控制与调谐回路的小尺寸解决方案
- 手持与便携式无线设备中对体积和性能有双重要求的场合
四、使用建议与电路注意事项
- 该变容二极管应在反向偏置条件下工作，偏压不应超过10 V；在设计偏压网络时应加入良好去耦以抑制噪声。
- 测量电容的标准条件为1 MHz，实际高频工作时电容随频率和温度会有变化，需在目标频段进行实际验证。
- 低漏电流有利于电压控制精度，但在极低频或直流漂移敏感的场合仍需关注温漂与偏压源稳定性。
- 串联电阻较低，有助于实现高Q，但在匹配网络中仍需考虑寄生电感和封装引线阻抗。
- 采用SOD-523封装时注意贴装工艺与回流曲线，防止热损伤；建议在电路板上预留适当的接地和去耦布局以保证性能。
五、封装与可靠性
SOD-523 为超小型表面贴装封装，适合高密度布局与自动化贴装。该封装在空间受限的移动设备与接收模块中具有明显优势。对于可靠性试验与长期稳定性，应依据系统工作温度范围与机械应力进行评估，并参考原厂完整数据手册中的环境与寿命规范。
六、选型要点
在选用1SV305时，若需要较宽的可变电容范围（高电容比）、低损耗（低Rs）和小封装体积，它是良好候选。对极限偏压、工作频段及温度稳定性有更严格要求的应用，建议结合原厂Datasheet进行仿真与样机验证，确认在目标频率与偏置条件下的实际表现。
如需更详细的频率响应曲线、温度特性或封装机械尺寸，请参考东芝原厂规格书或索取样片进行评估。
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