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1SS352(TPH3,F) 1SS352
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA 1SS352(TPH3, F)
- Type
- TOSHIBA
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- 1SS352(TPH3,F)
- Electronic Component
- 1
- Package
- USC
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.026g
- Electronic Component
- 1
- Electronic Component
- BM0257330061
- Current
- 100mA
- Diode
- 1
- Current(Ir)
- 500nA@80V
- (Vf)
- 1.2V@100mA
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 80V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1SS352 (TPH3,F) 肖特基二极管 产品概述
一、主要特性
1SS352 是东芝（TOSHIBA）推出的一款低正向压降肖特基整流二极管，主要面向便携式与高频开关电源等需要低损耗的小电流整流场合。器件具有低正向电压、低反向泄漏以及较好的浪涌承受能力，适合对效率和热耗敏感的电路设计。
二、关键电气参数
- 正向压降 (Vf)：约 1.2 V @ IF = 100 mA
- 直流反向耐压 (Vr)：80 V
- 额定整流电流：100 mA（直流）
- 反向电流 (Ir)：典型 500 nA @ Vr = 80 V（常温标称值）
- 非重复峰值浪涌电流 (Ifsm)：1 A（单次浪涌能力）
三、封装与热特性
封装标识为 USC，属于微小外形封装，适合表面贴装（SMD/SMT）工艺。由于器件电流等级较小，功耗主要取决于正向压降与工作电流，布局时应注意散热路径及铜箔面积，以抑制结温上升和反向泄漏随温度增长的加剧。
四、典型应用场景
- 小功率开关电源的二次侧整流或自由轮回路
- 通信、便携设备的电源保护与极性保护
- 高频整流、采样保持或快速恢复整流场合
- 需要低正向压降以提高效率的便携式电子产品
五、设计与使用建议
- 在设计中考虑 Vf 在 100 mA 时约 1.2 V 的功耗，及时进行热设计与结温（Tj）估算；长期工作建议降额使用以延长可靠性。
- 反向泄漏随温度显著增大，系统若在高温下工作，应验证 Ir 对电路的影响，必要时选用并联或改用更高规格器件。
- 峰值浪涌 Ifsm 为 1 A，可承受短时浪涌，但不宜作为长期过载条件。对于可能存在反复浪涌的应用，建议增加浪涌抑制或限流措施。
- 封装微小，焊接与回流工艺应遵循厂商推荐曲线，防止过热损伤。贴装时尽量缩短走线、增大铜箔散热区域并避免热斑。
总结：1SS352（TPH3,F）以其低正向压降与高耐压（80 V）特性，适用于小电流、高效率与空间受限的整流与保护应用。设计时关注温度对漏电流与热耗的影响，并做好相应的热管理与浪涌保护，可获得稳定可靠的工作表现。
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