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2SD2719(TE85L,F) 2SD2719
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA 2SD2719(TE85L, F)
- Type
- TOSHIBA
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- 2SD2719(TE85L,F)
- Electronic Component
- 1
- Package
- TSM
- Type
- NPN
- Electronic Component
- Darlington Transistor
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0263440857
- Power Dissipation(Pd)
- 800mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 800mA
- Current (h FE)
- 2000
- Voltage(Vebo)
- 8V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SD2719 (TE85L,F) 产品概述
一、概述
2SD2719 是东芝（TOSHIBA）出品的一款 NPN 小信号/低功耗功率三极管（封装：TSM），型号后缀 TE85L,F。该器件以高直流电流增益为主要特性，适合用作前级放大、驱动级或一般开关场合。器件设计兼顾增益与耐压，适用于需要较大电流放大倍数但功耗有限的电路。
二、主要电气参数
- 类型：NPN
- 集射极击穿电压 Vceo：60 V
- 最大集电极电流 Ic：800 mA
- 最大耗散功率 Pd：800 mW
- 集电极截止电流 Icbo：10 μA
- 集—射极饱和电压 VCE(sat)：典型 1.2 V / 1.5 V（视测试条件而定）
- 直流电流增益 hFE：2000（标称，高增益条件下）
- 射基极击穿电压 Vebo：8 V
- 基极—发射极饱和电压 VBE(sat)：2 V
以上参数为器件典型或极限值，实际设计中应参照器件详细数据手册的测试条件与曲线图进行验证。
三、特点与优势
- 高电流增益：hFE 达到 2000，便于在极小基极电流条件下获得较大集电极电流，适合放大微弱信号或减少驱动功耗的场合。
- 中等耐压能力：Vceo=60V，可在中低电压开关与放大电路中安全工作。
- 适度功耗承受：Pd=800 mW，配合合适散热可以满足小功率驱动或放大需求。
- 小封装（TSM）：占板面积小，适合空间受限的电路板布局。
四、典型应用场景
- 前置放大器与信号放大级：用于音频、小信号放大电路的电压或电流放大。
- 中低功率开关与驱动：作为继电器、小型负载或场效应管的驱动级。
- 电路保护与偏置网络：利用高增益特性在偏置电路中实现较小基流控制较大集流。
五、使用注意事项
- 增益随工作点变化：标称 hFE=2000 常在特定测试电流下测得，随 Ic、Vce 与温度变化较大。在接近 Ic 最大值时增益通常会下降，应在电路中留有裕量并测试实际增益曲线。
- 饱和电压与开关损耗：VCE(sat) 在 1.2–1.5 V，开关使用时会产生较大的压降与损耗，若需低饱和电压开关应考虑低 VCE(sat) 专用器件或并联方案。
- 基极反向击穿：Vebo=8V，避免对基极—发射极施加过大反向电压。
- 热管理：Pd=800 mW，长时间工作应注意封装散热与环境温度，必要时使用散热措施或改变工作点以降低耗散。
- 静电与处理：按普通半导体器件的 ESD 防护规范处理与安装。
六、选型建议
若设计要求为低驱动电流下实现较大输出并且工作电压在 60 V 以下、功耗处于小功率范围内，2SD2719 是合适选择。反之若需高电流饱和导通或低 VCE(sat)、较大功耗能力，应选用低饱和或功率级三极管。最终选型请以完整数据手册的典型曲线与额定条件为准，并在目标工作点上做实际测量验证。
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