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2SK3565(STA4,Q,M) 2SK3565
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA 2SK3565(STA4, Q, M)
- Type
- TOSHIBA
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- 2SK3565(STA4,Q,M)
- Electronic Component
- 1
- Package
- SC-67
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 2.54g
- Electronic Component
- 1
- Electronic Component
- BM0257248182
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 45W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 900V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SK3565 (STA4,Q,M) 产品概述
一、产品简介
2SK3565（STA4,Q,M）为东芝（TOSHIBA）出品的一款高压N沟道功率MOSFET，采用SC-67封装，适用于对耐压要求较高且电流不大的开关场合。器件额定漏源电压Vdss为900V，连续漏极电流Id为5A，耗散功率Pd为45W，适合高压开关与保护电路使用。
二、主要电气参数
- 类型：N沟道场效应管（MOSFET）
- 漏源电压 Vdss：900V
- 连续漏极电流 Id：5A
- 导通电阻 RDS(on)：2.5Ω （Vgs=10V）
- 阈值电压 Vgs(th)：4V
- 总栅极电荷 Qg：28nC（Vgs=10V）
- 输入电容 Ciss：1.15nF（Vds=25V）
- 输出电容 Coss：100pF
- 反向传输电容 Crss：20pF（Vds=25V）
- 耐温范围：-55℃ ~ +150℃
- 封装：SC-67（小型表面贴装）
三、性能特点
- 高耐压：900V额定耐压适合开关电源、初级侧开关及高压保护应用。
- 能承受中等电流：5A的连续电流能力配合45W的耗散功率，可在有良好散热条件下工作。
- 栅极驱动要求：Vgs(th)约4V，建议驱动电压采用10V以获得标称RDS(on)，否则导通损耗显著增加。
- 开关特性：Qg=28nC及Ciss=1.15nF表明开关过程中栅极驱动能量需求中等，需合适的驱动器以控制开关损耗和电磁干扰。Crss较小，有助于降低米勒效应带来的误触发。
四、典型应用场景
- 离线开关电源（高压初级侧）
- 反激/正激等功率转换拓扑的小功率开关元件
- 工业电子的高压开关与保护电路
- 高压脉冲发生器与缓冲电路
五、设计与使用建议
- 驱动电路：为达到规格化的RDS(on)，推荐栅极驱动电压10V，若采用逻辑电平驱动需验证导通电阻与损耗是否可接受。
- 开关损耗管理：考虑Qg与Ciss较大时的开关损耗，采用快速栅极驱动器并调节驱动阻抗以平衡开关损耗与电磁干扰。
- 热管理：在靠近45W的耗散能力下必须良好散热，评估封装的热阻并在电路板布局、散热片或铜箔面积上做相应设计与降额使用。
- 抗浪涌与保护：高压应用中建议配合RC吸收、电流限制或软启动电路以防止过压、过流和单脉冲应力超限。
- 焊接与可靠性：SC-67为小型贴片封装，遵循厂商推荐的回流焊温度曲线，避免过热导致性能下降。
六、封装与环境适应
SC-67小型封装利于表面贴装组装和紧凑布局。器件工作温度范围宽（-55℃至+150℃），适应工业级环境，但在高温或高负载场合需注意器件的热降额与长期可靠性评估。
总结：2SK3565（STA4,Q,M）是一款面向高压、低至中等电流应用的N沟MOSFET，适合要求900V耐压且对开关驱动与散热有明确设计的场合。在设计中应重点关注栅极驱动、开关损耗与热管理，以发挥其性能并确保长期可靠性。
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