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TPN2R203NC,L1Q(M TPN2R203NC
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- TOSHIBA TPN2R203NC, L1Q(M
- Type
- TOSHIBA
- Unit
- Electronic Component
- Minimum package
- 5000
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- TPN2R203NC,L1Q(M
- Electronic Component
- 1
- Package
- TSON-8(3.1x3.1)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.143g
- Electronic Component
- 1
- Electronic Component
- BM0231133068
- Power Dissipation(Pd)
- 42W
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 2.23nF
- Output Capacitor(Coss)
- 650pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TPN2R203NC,L1Q(M) 产品概述
一、产品简介
TPN2R203NC,L1Q(M) 是东芝（TOSHIBA）出品的一款高性能N沟道功率MOSFET，适用于中低压、大电流开关场合。器件额定漏源电压为30V，连续漏极电流可达45A，结合低导通电阻与适度的栅极电荷，使其在开关和低损耗传导应用中表现优秀。封装采用紧凑的TSON-8 (3.1 × 3.1 mm)，适合密集的电源模块与功率管理板设计。
二、主要电气参数
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：45A
- 导通电阻 RDS(on)：2.2 mΩ @ Vgs=10V, 测试电流22.5A
- 功耗 Pd：42W
- 阈值电压 Vgs(th)：2.3V
- 总栅极电荷 Qg：34 nC @ Vgs=10V
- 输入电容 Ciss：2.23 nF；输出电容 Coss：650 pF；反向传输电容 Crss：160 pF
三、核心特性与优势
- 极低的RDS(on)（2.2 mΩ）在导通状态下显著降低导通损耗，提高转换效率，适合高电流路径。
- 相对中等的Qg（34 nC）在驱动能力与开关损耗间取得平衡，便于使用常见驱动器或单片驱动方案。
- 紧凑TSON-8封装有利于缩小系统尺寸，同时支持较好的热路径设计与PCB散热解决方案。
四、典型应用场景
- 同步整流器与高效DC-DC降压转换器（Buck）
- 负载开关与电源分配网络（PDN）
- 车规与工业控制中低压大电流开关应用
- 电源管理模块、服务器与通信设备的功率级
五、封装与热管理
TSON-8 (3.1 × 3.1 mm) 封装利于贴片自动化，但由于器件可承受高达42W耗散，建议在PCB上设计充分的铜箔散热垫和过孔散热通道，必要时配合散热片或底板散热。实际散热性能受PCB厚度、铜面积及通孔连接影响，应按应用场景进行热仿真并验证结温。
六、选型与使用建议
- 若系统工作电压接近30V或存在浪涌，应考虑添加合适的浪涌保护与安全裕量。
- 对驱动器选择：推荐能提供接近10V栅压的驱动，以获得标称RDS(on)；若驱动电压受限，需评估RDS(on)随Vgs下降的影响。
- 在高频开关应用中关注Qg与Coss带来的开关损耗，必要时优化死区时间与驱动强度以降低交叉导通。
七、注意事项与可靠性
在设计中需考虑开启/关断瞬态、电容充放电影响以及寄生电感导致的振铃；布局上应缩短栅、源回路长度以降低噪声和应力。出厂参数为典型/测试条件下测得，实际应用请参照完整数据手册并在目标板级环境中进行验证。
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