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2SC4213-B(TE85L,F) 2SC4213
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA 2SC4213-B(TE85L, F)
- Type
- TOSHIBA
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- 2SC4213-B(TE85L,F)
- Electronic Component
- 1
- Package
- SC-70
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.014g
- Electronic Component
- 1
- Electronic Component
- BM0232342064
- Transistor Type
- NPN
- Frequency(f T)
- 30MHz
- Power Dissipation(Pd)
- 100mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 300mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SC4213-B (TE85L, F) 产品概述
一、主要参数
- 晶体管类型：NPN 双极型晶体管（BJT）
- 集电极电流 Ic：300 mA（最大）
- 集射极击穿电压 Vceo：20 V
- 最大耗散功率 Pd：100 mW
- 直流电流增益 hFE：200（在 Ic=4 mA、VCE=2 V 条件下）
- 特征频率 fT：30 MHz
- 集电极截止电流 Icbo：100 nA
- 集电极饱和电压 VCE(sat)：约 100 mV（典型饱和条件）
- 射基极击穿电压 Vebo：25 V
- 品牌：TOSHIBA（东芝）
- 封装：SC-70（小型表面贴装封装）
二、特性与性能分析
2SC4213-B 为低功耗、小体积的 NPN 小信号晶体管。高 hFE（在低电流工作点上可达 200）意味着在小基极电流下可获得较大的集电极电流放大，适合做驱动级或电流放大用途。fT≈30 MHz 表明其适用于音频及中低频放大或开关应用，但不适合高频 RF 放大（VHF 以上）。低 Icbo（100 nA）表示漏电流小，低噪声电路和电池供电设备更易保持静态电流低。
三、封装与热设计
SC-70 为超小型 SMD 封装，适合空间受限的便携设备与消费电子。需注意其 Pd 仅 100 mW，热容量有限。实际工作时应计算 VCE×Ic 不超过 Pd，并留有安全裕量。例如在饱和导通（VCE≈0.1 V）且 Ic 较小时，耗散较小；但若 VCE 为数伏、Ic 数十毫安时，耗散可能迅速超过额定值。建议在电路设计中避免长时间在高 VCE×Ic 条件下工作，必要时采用并联或更高功率器件。
四、典型应用
- 小信号开关与驱动（例如驱动继电器前置级、LED 驱动）
- 低功耗放大器（前置放大、音频前级）
- 电池供电设备中的信号放大与开关控制
- 消费类电子与便携仪器中的通用放大/切换元件
五、使用建议与注意事项
- 利用其高 hFE，可在基极限流的情况下实现较小驱动电流，但在逼近饱和区时要给予足够基极电流以降低 VCE(sat)。
- 设计时优先保证 Pd 安全：Pd ≥ VCE×Ic（含热阻与环境温度影响）并留裕量。
- Vceo=20 V 与 Vebo=25 V 提醒不要在高电压脉冲或反向基极电压下超过极限，以防击穿。
- SC-70 封装在回流焊接时需遵循厂商温度曲线与防静电措施，避免过热与 ESD 损伤。
- 若在高频或高电流场合使用，应评估 hFE 的随电流衰减及 fT 限制，必要时采用补偿或更高规格器件。
总结：2SC4213-B 是一枚面向低功耗、小尺寸应用的 NPN 小信号晶体管，适合便携式与消费电子中的放大与开关场景。在设计中重点考虑其 100 mW 的耗散限制与 20 V 的电压极限，合理偏置与散热安排可发挥其高增益与低饱和压的优点。
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