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2SK209-BL(TE85L,F) 2SK209
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA 2SK209-BL(TE85L, F)
- Type
- TOSHIBA
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- 2SK209-BL(TE85L,F)
- Electronic Component
- 1
- Package
- SC-59
- Electronic Component
- 1 N
- Electronic Component
- MOSFET(JFET)
- Electronic Component
- 0.019g
- FETType
- N
- Electronic Component
- 1
- Electronic Component
- BM0228736742
- Power Dissipation(Pd)
- 150mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Current(Idss)
- 14mA
- Capacitor(Ciss)
- 13pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SK209-BL (TE85L,F) 产品概述
一、器件简介
2SK209-BL（TE85L,F）为东芝（TOSHIBA）生产的N沟结型场效应管（JFET），属小功率、小体积射极结型器件，适用于低噪声、小信号放大与缓冲。主要参数（典型/标称值）：栅源截止电压 VGS(off) = 1.5V（测量电流 IG = 100nA）；栅源击穿电压 Vgss = 50V；耗散功率 Pd = 150mW；漏源电流 Idss = 14mA（VDS = 10V）；输入电容 Ciss = 13pF（VDS = 10V）；封装为 SC-59（SMD 小型封装）。
注：上列 VGS(off) 给出为幅值形式，具体极性及典型分布请以原厂数据手册为准（N沟器件在电路中常以负栅压表示器件截止特性）。
二、主要特性
- 高输入阻抗，栅极漏电流极小，适合作为缓冲级或前置放大器。
- 低输入电容（Ciss ≈ 13pF），对高频响应影响小，适合宽带或射频前端的小信号处理。
- 中等 Idss（≈14mA@10V），便于在低电压下获得数毫安电流工作点。
- 耗散功率较低（150mW），适合低功耗、贴片安装的场合。
- 50V 的栅源击穿保证在一般小信号电路中具有较好的耐压裕度。
三、典型应用场景
- 低噪声前置放大（话筒、传感器前端）。
- 电平缓冲、阻抗变换（源跟随器）。
- 简单恒流源与偏置电路。
- 模拟开关、混频器或小信号差分级。
- 便携设备与空间受限的贴片电路。
四、偏置与设计要点
JFET 常用 Shockley 方程近似描述 Id 与 Vgs 的关系：Id = Idss × (1 − Vgs/Vp)^2，其中 Vp 即 VGS(off) 的幅值。实际设计时应注意 Idss 与 VGS(off) 的器件间变动，推荐采用自偏置（源极电阻）或带负反馈的偏置方式以提高稳定性。由于耗散功率仅 150mW，应在设计工作点时计算结温并留有足够余量，避免在高环境温度或无散热的情况下逼近功率极限。
五、封装、热管理与注意事项
SC-59 为小型 SMD 封装，适合表面贴装和回流焊工艺。该器件功耗有限，电路板布局应考虑引脚散热及铜箔面积以降低结温。JFET 对静电较敏感，焊接、测试与装配过程中应采取 ESD 防护措施（接地手环、防静电台垫、离子风机等）。
六、结语
2SK209-BL 适合用于要求低噪声、低输入电容和小功率的模拟前端与缓冲应用。具体电气特性曲线、极限值与封装机械尺寸请以东芝官方数据手册为准；在实际电路中推荐进行器件筛选与仿真以确定最佳偏置与稳定性。
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