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TK110P10PL,RQ(S2 TK110P10PL
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA TK110P10PL, RQ(S2
- Type
- TOSHIBA
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- TK110P10PL,RQ(S2
- Electronic Component
- 1
- Package
- TO-252-2(DPAK)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.37g
- Electronic Component
- 1
- Electronic Component
- BM0228587134
- Power Dissipation(Pd)
- 75W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 100V
- Capacitor(Ciss)
- 2.04nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TK110P10PL,RQ(S2)功率MOSFET产品概述
一、核心参数总览
TK110P10PL,RQ(S2)是东芝推出的N沟道增强型功率MOSFET，核心参数覆盖电压、电流、导通及开关特性，具体如下：
类别 参数名称 规格值 测试条件 基本特性 漏源击穿电压 Vdss=100V 栅源短路（Vgs=0V） 连续漏极电流 Id=40A 环境温度25℃ 脉冲漏极电流 Idp=60A 参考产品描述的脉冲条件 导通特性 导通电阻 RDS(on)=8.9mΩ Vgs=10V、Id=20A 栅源阈值电压 Vgs(th)=1.5~2.5V Id=250μA 开关特性 总栅极电荷 Qg=33nC Vgs=10V、Vds=50V 输入电容 Ciss=2.04nF Vds=25V、f=1MHz 反向传输电容 Crss=22pF 同输入电容测试条件 热学参数 最大耗散功率 Pd=75W 环境温度25℃ 封装 封装类型 TO-252-2（DPAK） 表面贴装、3引脚（实际）二、关键性能优势
2.1 低导通损耗，效率提升
8.9mΩ的导通电阻处于同电压等级（100V）的低阻区间，可显著降低导通损耗。以连续工作电流40A为例，导通损耗仅为：
$$ P=I^2 \times R = 40^2 \times 8.9 \times 10^{-3} \approx 14.2W $$
远低于高阻MOSFET的损耗，减少散热片体积，降低系统成本。
2.2 快速开关，适配高频
- 小反向传输电容（Crss=22pF）：抑制米勒效应，提升开关速度；
- 低栅极电荷（Qg=33nC）：减少驱动电路功率消耗，支持100kHz以上高频应用（如DC-DC转换器），兼顾开关损耗与效率。
2.3 宽电流范围，应用灵活
连续40A、脉冲60A的电流能力覆盖多数中功率场景：
- 小型直流电机驱动（峰值电流可达60A）；
- 12V/24V电源适配器（输出电流30A左右）；
- 电池保护电路（大电流切换）。
三、封装与典型应用
3.1 TO-252-2（DPAK）封装特点
该器件采用表面贴装TO-252封装（描述中“-2”为笔误，实际为3引脚：G、D、S），具备以下优势：
- 尺寸紧凑（约6.5×5.0mm），适合自动化贴装；
- 散热焊盘面积大，可通过PCB铜箔辅助散热，满足Pd=75W的功率需求。
3.2 典型应用领域
- 开关电源：DC-DC降压转换器（24V→12V、12V→5V）、AC-DC适配器（输出功率100W+）；
- 电机驱动：电动工具、智能家居的小型直流/步进电机；
- 负载开关：电池组过流/过压保护、多电源系统切换；
- 其他：大功率LED驱动、UPS辅助逆变电路。
四、可靠性与品牌保障
4.1 东芝品牌优势
东芝拥有数十年功率器件研发经验，产品一致性好、可靠性经市场验证，符合RoHS环保标准（无铅无卤），适配现代电子设备的环保要求。
4.2 可靠性设计
- 经过严格电应力测试（Vdss击穿测试、Idp脉冲测试）；
- 热应力测试（温度循环、高温存储）满足工业级标准；
- ESD防护能力达HBM Class 2（2kV以上），抵抗静电干扰。
五、产品总结
TK110P10PL,RQ(S2)是一款高性价比100V N沟道MOSFET，以低导通电阻、快速开关速度和紧凑封装为核心竞争力，覆盖开关电源、电机驱动等中功率场景。东芝的品牌保障与可靠设计，使其成为此类应用的理想选择，可有效提升系统效率、降低成本并增强可靠性。
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