WMSIC Electronic Components

XNRUSEMI XR60K03F

ModelXR60K03F
PackagePDFN-8L(5x6)
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR60K03F
Type
XNRUSEMI
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR60K03F
Electronic Component
1
Package
PDFN-8L(5x6)
Electronic Component
2 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.171g
Electronic Component
1
Electronic Component
BM0265053419
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
45W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR60K03F 产品概述

一、产品简介

XR60K03F 是新锐(XNRUSEMI)推出的双通道 P 沟道功率 MOSFET,封装为 PDFN-8L (5x6)。器件针对中高电流、高效率电源路径和载流控制场景优化,集成两路 P 沟道晶体管,适用于需要高侧开关或负载断开功能的应用。

二、主要规格参数

  • 器件类型:P 沟道 MOSFET(2 个 P 沟道单元)
  • 漏源电压 Vdss:30 V
  • 连续漏极电流 Id:60 A
  • 导通电阻 RDS(on):7.2 mΩ @ Vgs = −10 V
  • 最大耗散功率 Pd:45 W
  • 阈值电压 Vgs(th):1.6 V(典型)
  • 栅极总电荷 Qg:30 nC @ 15 V
  • 输入电容 Ciss:2.396 nF
  • 输出电容 Coss:325 pF
  • 反向传输电容 Crss:283 pF
  • 工作温度范围:−55 ℃ ~ +150 ℃
  • 封装:PDFN-8L (5×6)

三、核心特性

  • 极低的 RDS(on)(7.2 mΩ)可在导通时显著降低导通损耗,提高能效并减少发热。
  • 高电流能力(60 A)适合大电流开关与功率路径应用。
  • 中等栅极电荷(30 nC)在保证切换速度的同时,对驱动器要求适中,兼顾开关损耗与驱动能耗。
  • 宽温度范围和较高功耗能力,适用于工业级环境。

四、典型应用场景

  • 高侧负载开关、逆向电流阻断(电源路径管理)
  • DC-DC 转换器的同步或旁路开关(需按 P 通道特性配置)
  • 电池保护与电源切换模块
  • 车载电子、通信设备和工业供电系统中的功率管理

五、热管理与封装建议

PDFN-8L (5×6) 封装有利于散热和 PCB 热扩散。45 W 的耗散能力受 PCB 铜箔面积、焊盘热阻和环境散热影响,建议:

  • 在 PCB 设计中使用大的散热焊盘和多层铜散热通孔;
  • 在靠近发热源处保留足够的铜面积做散热扩展;
  • 验证在目标工作温度下的结温与降额需求,必要时采用强制风冷或散热片。

六、选型与使用建议

  • 驱动电压:为达到标称 RDS(on),建议 Vgs 驱动至约 −10 V(注意 P 沟道为负向驱动);
  • 驱动器选型需考虑 Qg=30 nC,计算驱动器峰值电流与功耗;
  • 开关过程中 Coss/Crss 会影响电压过冲与开关损耗,必要时配合阻尼电阻或缓冲网络;
  • 若并联使用或与其他器件协同工作,注意电流分配与热一致性。

七、可靠性与注意事项

  • 遵循焊接工艺规范,避免过高回流温度超出封装极限;
  • 在实际应用中进行电热仿真和实测验证结温;
  • 为防止栅极过压或静电损坏,建议在门极增加限流/保护措施并遵循 ESD 防护规范;
  • 详细电气极限与典型曲线请参阅完整规格书以获得准确设计依据。

XR60K03F 以其低导通阻抗、高电流能力和工业级温度范围,适合对效率与热设计有较高要求的高侧功率开关与电源管理场景。

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