WMSIC Electronic Components

XNRUSEMI XR4009S

ModelXR4009S
PackageSOP8
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR4009S
Type
XNRUSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR4009S
Electronic Component
1
Package
SOP8
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.173g
Electronic Component
1
Electronic Component
BM0264844067
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
40V
Capacitor(Ciss)
964pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR4009S 产品概述

一、产品简介

XR4009S 是 XNRUSEMI(新锐)推出的一款高单元密度沟槽式 N 沟道 MOSFET,封装为 SOP8。该器件针对同步降压转换器与中低压功率开关场景优化,兼顾极低导通电阻与适中栅极电荷,适合在空间受限但需高效率的电源前端与功率管理电路中使用。符合 RoHS 与绿色产品要求,并声明“100%保证 EAS”,具备完整功能可靠性认证。

二、主要参数

  • 漏源电压 Vdss:40 V
  • 连续漏极电流 Id:9 A
  • 导通电阻 RDS(on):12 mΩ @ Vgs=10 V
  • 功耗 Pd:2 W(封装热限制相关,请参考具体散热条件)
  • 阈值电压 Vgs(th):1.5 V
  • 总栅极电荷 Qg:22.9 nC @ Vgs=20 V
  • 输入电容 Ciss:964 pF
  • 反向传输电容 Crss:96 pF
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOP8
  • 单位:1 个 N 沟道 MOSFET

三、关键特性与优势

  • 低 RDS(on):12 mΩ 在 10 V 驱动下提供极低传导损耗,利于提高转换效率。
  • 适中栅极电荷:Qg=22.9 nC(20 V)在高频开关场合兼顾开关损耗与驱动功耗,便于驱动器选择与系统匹配。
  • 沟槽式工艺:高单元密度实现更低导通电阻和更稳定的热性能。
  • 全面可靠性与合规性:RoHS、绿色产品认证与完整功能可靠性认证,适合商业及工业级应用部署。

四、典型应用场景

  • 同步降压(Synchronous Buck)转换器的高侧或低侧开关。
  • DC-DC 电源模块、笔电与嵌入式电源管理。
  • 负载开关、功率分配与电机驱动(中小功率)。
  • 通信基站、电源适配器与开关电源(SMPS)前端。

五、设计与使用建议

  • 驱动电压:为达到标称 RDS(on),建议栅极驱动 Vgs=10 V;若采用逻辑电平驱动(如 5 V),需验证导通电阻与损耗是否满足系统要求。
  • 开关损耗管理:Ciss 与 Qg 将影响开关瞬态损耗,选择合适栅极驱动器/缓冲以缩短切换时间并控制 EMI。Crss(96 pF)会带来米勒效应,设计布局时注意回路寄生与栅极抗震。
  • 热管理:SOP8 封装 Pd=2 W(典型封装条件),在实际电路中应通过大面积铜箔、散热过孔或散热器降温,避免长期超额流过导致热失效。
  • 安全余量:工作电压不超过 40 V,考虑浪涌与瞬态时给出适当裕度及保护方案(TVS、RC 吸收等)。

XR4009S 以其低导通电阻与良好开关特性,为要求高效率与小体积的电源方案提供可靠的 MOSFET 选项。具体应用前建议参考完整器件数据手册与热阻/脉冲额定值,按实际 PCB 布局与散热条件进行仿真与验证。

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