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XNRUSEMI XR10V03S
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR10V03S
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR10V03S
- Electronic Component
- 1
- Package
- SOP8
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.19g
- Electronic Component
- 1
- Electronic Component
- BM0264844089
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 3.2W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR10V03S 产品概述
一、产品简介
XR10V03S 为 XNRUSEMI（新锐）推出的高密度沟槽式双通道 N 沟道 MOSFET，封装为 SOP-8，针对同步降压（synchronous buck）等开关电源应用优化。器件在 30V 漏源耐压下提供低导通电阻与合理的栅极电荷，实现高效率与快速开关的平衡，适合对效率和开关损耗有严格要求的系统。
二、主要规格
- 类型：双通道 N 沟道 MOSFET（数量：2）
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：11.5A
- 导通电阻 RDS(on)：13mΩ @ Vgs=10V
- 阈值电压 Vgs(th)：2.5V
- 总栅极电荷 Qg：15nC @ Vgs=10V
- 输入电容 Ciss：633pF；输出电容 Coss：120pF；反向传输电容 Crss：99pF
- 耗散功率 Pd：3.2W（环境条件见产品手册）
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOP8
- 合规：RoHS、绿色产品；100% 保证 EAS，全功能可靠性认证
三、性能亮点
- 低 RDS(on)（13mΩ@10V）降低导通损耗，提升轻载效率；适合高电流密度应用。
- 较低的总栅极电荷（15nC@10V）有利于减小驱动损耗与提高开关速度，配合合理驱动可以降低开关损耗。
- 中等 Ciss/Coss/Crss 值表明在开关过渡期需关注 Miller 效应与 dv/dt 引起的寄生耦合，利于在设计时把握速度与 EMI 的平衡。
- 宽温度范围与完整可靠性认证，适用于车载类或工业级环境（请依据具体应用核实认证等级）。
四、典型应用
- 同步降压转换器（主开/同步整流管）
- 高密度功率模块与电源管理子系统
- 工业控制与通信电源
- 需要在有限 PCB 面积内实现高电流切换的系统
五、设计与使用建议
- 建议以 10V 栅压驱动以达到标称 RDS(on)；若使用 5V 驱动需验证导通损耗。
- PCB 布局：缩短源极回流与漏极电流路径，增大铜皮并在必要处采用散热过孔以提升热耗散。
- 开关瞬态控制：可在栅极串联合适阻容（Rg、RC）以抑制振铃并控制开关速度，依据 Crss 考虑 Miller 夹持设计。
- 并联使用时注意电流分享与门极驱动一致性，避免单片过热。
- 若系统有高能量浪涌或反向再生，请参考器件完整数据手册确认耐冲击与能量吸收能力（片上击穿与耗散功率受封装与环境限制）。
六、可靠性与合规
XR10V03S 满足 RoHS 与绿色产品要求，提供 100% EAS 保证并通过全功能可靠性认证。对于关键应用（汽车电子、医疗等）建议索取完整可靠性报告与应用边界条件文件，以便进行系统级评价与长期可靠性验证。
备注：本文档基于器件主要参数与典型应用建议撰写，具体电气及热性能请以正式数据手册为准。
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