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XNRUSEMI XR100N03Z
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR100N03Z
- Type
- XNRUSEMI
- Minimum package
- 80 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR100N03Z
- Electronic Component
- 1
- Package
- TO251-3L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0264844062
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 80W
- Electronic Component
- Electronic Component
- Electronic Component
- 80
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR100N03Z 产品概述
一、概述
XR100N03Z 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道 MOSFET，专为同步降压转换器和高效率电源管理应用优化。器件在保证低导通电阻的同时兼顾较低的栅极电荷，从而在高电流开关场合实现更低的导通和开关损耗。
二、主要电气参数
- 类型：N 沟道 MOSFET
- 漏源电压 Vdss：30 V
- 连续漏极电流 Id：100 A（在适当散热条件下）
- 导通电阻 RDS(on)：10 mΩ @ VGS = 4.5 V
- 耗散功率 Pd：80 W
- 阈值电压 VGS(th)：2.5 V
- 总栅极电荷 Qg：45 nC @ VGS = 10 V
- 输入电容 Ciss：2.1 nF
- 反向传输电容 Crss（Miller）：282 pF
- 工作温度范围：-55 ℃ ~ +175 ℃
- 封装：TO251-3L
三、性能特点与典型应用
- 低 RDS(on)（10 mΩ@4.5V）使器件在高电流路径上具有较小的导通损耗，适合 12V/5V/3.3V 降压转换器、服务器电源及电池供电系统。
- 中等 Qg（45 nC@10V）兼顾了驱动能耗与开关速度，适配常见驱动器与控制器；Crss = 282 pF 需在高速切换时注意 Miller 问题以防止死区损耗增加。
- 宽工作温度范畴与 80W 耗散能力利于苛刻环境下的可靠运行与热裕量管理。
四、封装与热管理建议
TO251-3L 封装提供良好的散热通道与焊接可靠性。实际电路设计中建议：优化铜箔散热层、使用多层 PCB 热通道、在必要时配合散热片或强制风冷，以确保在高电流工作下 MOSFET 的结温与封装功耗保持在安全范围内。
五、合规与可靠性
产品符合 RoHS 与绿色环保要求，100% 保证 EAS，具备完整功能与可靠性认证，适合量产导入与工业级应用场景。
总结：XR100N03Z 以 30V、100A 与 10 mΩ 的特性，提供了在中低压、大电流开关电源及功率转换场合的高性价比选择，设计时需结合开关频率与驱动方案优化栅极驱动与热设计。
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