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XNRUSEMI XR150N03
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR150N03
- Type
- XNRUSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR150N03
- Electronic Component
- 1
- Package
- TO252-3L
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.458g
- Electronic Component
- 1
- Electronic Component
- BM0264844076
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 87W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 6.272nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR150N03 产品概述
一、产品简介
XR150N03 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道功率 MOSFET，专为同步降压转换器和高效率开关电源设计。器件在低导通电阻与合理栅极电荷之间取得平衡，适合大电流、低损耗应用场景。
二、主要参数
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：150A
- 导通电阻 RDS(on)：1.95mΩ @ Vgs=10V
- 最大耗散功率 Pd：87W
- 总栅极电荷 Qg：143nC @ Vgs=24V
- 输入电容 Ciss：6.272nF；反向传输电容 Crss：718pF
- 工作温度范围：-55℃ ~ +150℃
- 封装：TO252-3L（DPAK）
三、关键特性
- 低 RDS(on)：1.95mΩ@10V 提供极低的导通损耗，适合高电流路径以降低导通功耗和发热。
- 适度栅极电荷：Qg=143nC（24V）在高速开关与驱动损耗间提供平衡，需根据驱动能力选择合适栅极驱动器。
- 稳定寄生参数：Ciss 与 Crss 数值有助于预估开关性能与回扫能量。
- 宽温度范围与高功率耗散：适应严苛环境与较大功率密度应用。
- 符合环保与可靠性要求：RoHS/绿色产品，100% 保证 EAS，并通过全功能可靠性认证。
四、典型应用
- 同步降压（Synchronous Buck）转换器功率管
- 服务器与通讯电源、末端电源模块
- 电机驱动与大电流开关应用
- 高效 DC-DC 模块与功率管理单元
五、封装与热管理
TO252-3L（DPAK）封装适合表面贴装与自动化生产。器件 Pd=87W 为热设计提供了参考，但实际允许功耗依赖 PCB 铜箔散热、焊盘面积与空气流动。建议在热敏区域加大铜量并使用多层过孔导热，以保证长期可靠运行。
六、使用建议与注意事项
- 栅极驱动：由于较大的 Qg，需配套足够电流能力的驱动器以保证开关速度并控制切换损耗。
- 布局与接地：减小环路面积、优化源-地回流路径可降低寄生电感与 EMI。
- 测试与保护：在高电流条件下注意开启电流、短路和热关断保护策略。
- 可靠性：遵循器件数据手册中最大额定值与热阻规范，进行实际工况下的热仿真与寿命验证。
XR150N03 综合了低导通阻抗与可控栅极电荷的设计，适合需要高效率与高电流密度的同步开关电源场合。欲获取完整电气特性曲线、封装尺寸与典型应用电路，请参阅产品数据手册或联系 XNRUSEMI（新锐）技术支持。
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