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XNRUSEMI XR80N02
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR80N02
- Type
- XNRUSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR80N02
- Electronic Component
- 1
- Package
- TO-252-3L
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0264844099
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 58W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 2.5nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR80N02 产品概述
一、主要参数概览
XR80N02 是一款高单元密度沟槽式 N 沟道 MOSFET（TO-252-3L 封装），额定漏源电压 Vdss = 20V，连续漏极电流 Id = 80A，导通电阻 RDS(on) = 3.7mΩ（Vgs = 4.5V），耗散功率 Pd = 58W，阈值电压 Vgs(th) ≈ 0.7V。栅极电荷 Qg = 32nC（10V），输入电容 Ciss = 2.5nF，反向传输电容 Crss = 386pF，工作温度范围 -55℃ ~ +150℃。产品符合 RoHS 与绿色产品要求，100% 保证 EAS，并通过完整功能可靠性认证。品牌：XNRUSEMI（新锐）。
二、产品特性
- 低 RDS(on)（3.7mΩ@4.5V），在 4.5V 逻辑驱动下即可获得良好导通性能，适合低压大电流场合。
- 较高的单元密度与沟槽工艺带来更小的导通损耗与紧凑封装兼容性。
- 中等栅极电荷（32nC）在高频切换时对驱动器要求适中，Ciss 和 Crss 的组合有利于在换向时控制米勒效应。
三、典型应用
- 同步降压转换器（尤其 3.3V / 5V / 12V 前端或次级侧）
- 服务器与通信设备电源、VRM、POL 模块
- 电源管理开关、功率分配与高电流负载开关
四、设计与热管理要点
- 导通损耗举例：在直流 80A 下 Pcond ≈ I^2·RDS(on) = 80^2·3.7mΩ ≈ 23.7W，需要良好 PCB 散热（加厚铜箔、散热垫或散热器）。
- 栅极驱动功率：Pdrive ≈ Qg·Vdrive·f。以 Vdrive=10V、f=500kHz 为例，Pdrive ≈ 32nC·10V·500kHz = 0.16W（仅驱动能耗，不含开关损耗）。
- 布局要点：短且粗的漏源铜箔、独立地线回流、靠近驱动器放置去耦和栅极阻尼（建议并联 RC 或 TVS 保护以抑制尖峰）。
五、封装与可靠性
TO-252-3L（DPAK）适合表面贴装并可通过 PCB 铜面散热。器件通过功能可靠性认证，且满足环保与 EAS 保证，适合批量可靠性较高的工业与商用场景。
六、选型建议
- 需要 12V 或更低电压轨道高电流开关时优先考虑；如需在更高电压或更严格热裕度下工作，应选择更高 Vdss 或更低 RDS(on) 的器件或并联使用多片。
- 在高开关频率或对换向损耗敏感的场合，评估 Crss 与 Qg 对开关能耗及驱动器能力的影响。
总结：XR80N02 在低电压高电流场景提供平衡的导通性能与栅极特性，适合同步降压与功率分配应用，但在热设计与驱动设计上需给予充分关注以发挥其最佳性能。
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