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XNRUSEMI XR120N03A
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR120N03A
- Type
- XNRUSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR120N03A
- Electronic Component
- 1
- Package
- TO252-3L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0264844141
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 88W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR120N03A 产品概述
一、简介
XR120N03A 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道 MOSFET。器件额定漏源电压 30V，连续漏极电流 120A，采用 TO252-3L（DPAK）封装，满足 RoHS 要求并提供 100% 单脉冲雪崩能量（EAS）保证，适合对可靠性与效率有较高要求的功率应用。
二、主要参数
- Vdss：30V
- Id（连续）：120A
- RDS(on)：4.5mΩ @ Vgs = 4.5V
- Pd（耗散功率）：88W
- Vgs(th)：2.2V
- 总栅极电荷 Qg：72nC @ 15V
- 输入电容 Ciss：≈4nF；反向传输电容 Crss：≈396pF
- 工作温度范围：-55℃ ～ +150℃
三、性能亮点
该器件在 4.5V 驱动下即可表现出较低的导通电阻，适合低压大电流场合；高单元密度沟槽结构在降低 RDS(on) 的同时兼顾了开关性能；较大的 Qg 显示需要配备驱动能力充足的栅极驱动器以降低开关损耗与驱动应力；100% 单脉冲雪崩能量测试增强了器件在瞬态冲击下的鲁棒性。
四、典型应用
- 同步降压（synchronous buck）转换器功率开关
- DC-DC 电源模块与服务器/通信电源
- 电机驱动、功率分配开关与负载开关
- 高可靠性工业与汽车电子（视系统要求）
五、布局与使用建议
为降低开关损耗与 EMI，应尽量缩短门极与功率回路的寄生电感，门极回路采用较短走线并视情况加入阻尼电阻；在功率管下方与焊盘周围增加铜箔与散热过孔以改善热路径；由于 Qg=72nC，选择驱动器时需保证足够的峰值电流能力并考虑驱动器功耗；关注 Crss/Ciss 对开关过渡的影响，必要时优化死区与驱动波形。
六、封装与可靠性
TO252-3L（DPAK）便于表面贴装与自动化生产，适合中等功率散热方案；器件工作温度范围宽，且通过完整功能可靠性认证，适合量产与工业级应用。
七、选型提示
若系统在更高 Vgs 下工作可进一步降低 RDS(on)；对极限散热或极高电流场合，可并联多颗器件以分担热量与电流。高频开关设计应综合考虑 Qg 与 Crss 带来的开关能耗与驱动要求，合理匹配栅极驱动器与布局以获得最佳效率与可靠性。
型号：XR120N03A，品牌：XNRUSEMI（新锐）。如需资料表（Datasheet）或热阻/脉冲特性曲线，可向供应渠道索取完整规格书以便精确设计验证。
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