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XNRUSEMI XR2020S
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR2020S
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR2020S
- Electronic Component
- 1
- Package
- SOP8
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.173g
- Electronic Component
- 1
- Electronic Component
- BM0264844087
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 38W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 1.832nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR2020S 产品概述
一、主要规格与特性
XR2020S 为 XNRUSEMI（新锐）推出的一款高细胞密度沟槽式 N 沟道 MOSFET，面向同步降压及高频开关应用。主要参数如下：
- 类型：N 沟道 MOSFET（沟槽式高细胞密度）
- 数量：1 片
- 漏源电压 Vdss：20 V
- 连续漏极电流 Id：20 A
- 导通电阻 RDS(on)：4.8 mΩ @ Vgs = 4.5 V
- 耗散功率 Pd：38 W
- 栅极电荷 Qg：23 nC @ 10 V
- 输入电容 Ciss：1.832 nF
- 反向传输电容 Crss：271 pF
- 工作温度范围：-55 ℃ ～ +150 ℃
- 封装：SOP8
- 认证与特性：符合 RoHS 与绿色产品要求，100% 保证雪崩能量耐量，具备完整功能可靠性认证
二、产品优势
- 低导通阻抗与高电流能力：4.8 mΩ（4.5 V 驱动）在低电压同步整流场景可显著降低 conduction loss，支持高效率设计。
- 良好的开关特性：Qg 仅 23 nC（10 V），在保证开关速度的同时兼顾栅极驱动损耗，适合中高开关频率电源。
- 完整可靠性保障：100% 雪崩能量测试，适合存在浪涌与不确定负载的工业环境。
三、适用场景
- 同步降压转换器（尤其 12 V/5 V 输入的中大功率模块）
- 电源管理、DC-DC 模块、负载开关
- 对效率与尺寸有要求的消费电子与工业电源
- 需要高可靠性和抗冲击能力的系统
四、封装与热管理建议
SOP8 封装有利于小体积设计，但热阻相对较大。建议：
- 在 PCB 上采用足够面积的散热铜箔（大面积铺铜、过孔连接多层散热层）。
- 根据实际工作电流与频率进行功率耗散计算，并留出安全裕度及降额设计。
- 在并联使用时注意 RDS(on) 匹配与共流分配。
五、驱动与布局建议
- 驱动器应能提供足够电流以快速充放 Qg，减小开关损耗；根据系统优先级在驱动速度与 EMI 间做权衡。
- 栅极回路尽量短且阻抗低，放置紧靠 MOSFET 的去耦电容，走线短粗，减少环路面积以降低 EMI。
- 输出回路（D-S）采用短且宽的铜迹，并在器件两端靠近引脚放置退耦电容。
六、可靠性与选型要点
XR2020S 提供 RoHS 合规与完整功能可靠性认证，适合对寿命与抗冲击有较高要求的设计。选型时关注系统最大电压、峰值回路电流及散热条件，若在高功率或高温场景下工作，建议进行实际热仿真与实测验证。
如需参考样片、规格书或评估板资料，可联系 XNRUSEMI（新锐）或授权分销商获取更详尽的电气特性曲线与封装机械图。
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