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XNRUSEMI XR20N03
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR20N03
- Type
- XNRUSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR20N03
- Electronic Component
- 1
- Package
- TO252-3L
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.52g
- Electronic Component
- 1
- Electronic Component
- BM0264844103
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 5.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 490pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR20N03 产品概述
XR20N03 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道 MOSFET，面向同步降压转换器及其它开关电源应用，兼顾低导通损耗与良好开关性能。
一、主要特性
- 单片 N 沟道，漏源电压 Vdss = 30V，适合中低压电源域。
- 连续漏极电流 Id = 20A，导通电阻 RDS(on) = 15mΩ（Vgs = 10V），导通损耗低。
- 总耗散功率 Pd = 5.5W（TO252-3L 封装），工作温度范围 -55℃ ~ +150℃。
- 栅极电荷 Qg = 10nC（Vgs = 15V），输入电容 Ciss = 490pF，反向传输电容 Crss = 61pF，兼顾开关速度与驱动能耗。
- 符合 RoHS/绿色产品要求，100% 保证雪崩能量耐量，完整功能可靠性测试。
二、典型应用
- 同步整流/同步降压转换器（同步 Buck）
- DC-DC 转换模块、功率管理、电源开关阵列
- 电机驱动、充电器及功率分配系统
三、封装与热管理
- 封装：TO252-3L（DPAK 类似），适合表面贴装与中功率散热要求。
- 热设计建议：合理铺设大铜箔热铜箔与热过孔，缩短电流回流环路，确保器件能在额定条件下稳定工作。
四、设计注意事项
- 推荐栅极驱动电压 10V（驱动范围依据驱动器与系统要求），以获得标称 RDS(on)。
- Crss 值表明存在 Miller 效应，快速边沿切换时注意控制栅阻并匹配驱动器以抑制振铃和开关应力。
- 考虑开关与导通损耗的权衡：低 Qg 有利于降低驱动损耗，高单元密度有利于降低导通损耗。
XR20N03 以其低 RDS(on)、适中 Qg 与完整的可靠性保证，为同步降压等高效电源设计提供经济且可靠的功率开关解决方案。
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