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XNRUSEMI XR3416L
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR3416L
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR3416L
- Electronic Component
- 1
- Package
- SOT23-3L
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0264844120
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 900mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 545pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR3416L 产品概述
一、产品简介
XR3416L 为 XNRUSEMI（新锐）推出的一款高细胞密度沟槽式N沟道MOSFET，封装为 SOT23-3L，专为大多数小功率开关与负载开关场景优化。器件满足 RoHS 与绿色产品要求，并通过完整功能可靠性认证，具备良好的产业可用性与长期供应保障。
二、关键参数
- 漏源电压 Vdss：20V
- 连续漏极电流 Id：6A
- 导通电阻 RDS(on)：16.5mΩ @ Vgs=4.5V
- 最大耗散功率 Pd：900mW（SOT23热性能受限）
- 阈值电压 Vgs(th)：700mV
- 栅极电荷 Qg：8nC @ 10V
- 输入电容 Ciss：545pF，反向传输电容 Crss：90pF
- 工作温度范围：-55℃ ~ +150℃
- ESD 等级：2000V HBM
三、主要特点与优势
- 低导通电阻在逻辑电平驱动（4.5V）下即可实现高效率开关，减少导通损耗。
- 沟槽式结构与高细胞密度提供更佳的导通性能与可靠性。
- 合理的栅极电荷与输入电容，在驱动功耗与开关速度之间取得平衡，适合脉冲与静态工况。
- 小封装（SOT23-3L）便于高密度PCB设计与成本控制。
四、典型应用
- 负载开关与电源管理（低压DC-DC输出切换、负载断电）
- 便携设备与电池供电系统的功率开关
- 低压驱动电机驱动、继电器替代、通断控制等小功率场合
五、使用建议与注意事项
- SOT23封装散热受限，连续大电流应用需通过增加PCB铜箔面积或并联器件改善散热，避免长期接近Pd上限。
- 建议采用短且宽的走线连接漏极至负载/电源，减小寄生电阻与热阻。
- 栅极驱动尽量提供稳定的4.5V逻辑电平以达标称的RDS(on)，若驱动电压更高可进一步降低导通损耗，但须注意Qg增加导致驱动损耗上升。
- 注意ESD防护与搬运规范（HBM 2kV），在生产线上使用防静电措施。
六、封装与可靠性
- 封装：SOT23-3L，适合自动贴装与小型化设计。
- 可靠性：符合RoHS与绿色产品要求，并通过完整的功能可靠性认证，适合量产与长期部署。
总结：XR3416L 在20V/6A等级的低压开关领域提供了低RDS(on)、适中的驱动特性与小型封装，适合对效率与尺寸有要求的消费电子与工业小功率开关场景。
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