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XNRUSEMI XR20N06D
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR20N06D
- Type
- XNRUSEMI
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR20N06D
- Electronic Component
- 1
- Package
- PDFN3333-8L
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.1g
- Electronic Component
- 1
- Electronic Component
- BM0264974433
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 34.7W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 1.148nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR20N06D 产品概述
一、产品简介
XR20N06D 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道功率 MOSFET，额定漏源电压为 60V，适用于大多数同步降压转换器及通用开关电源应用。器件符合 RoHS 与绿色产品要求，并 100% 保证雪崩能量（EAS），通过完整的功能可靠性认证，适合要求高可靠性的工业与消费类电源设计。
二、主要电气参数摘要
- 类型：N 沟道 MOSFET（单元数：1）
- 漏源电压 Vdss：60V
- 连续漏极电流 Id：20A
- 导通电阻 RDS(on)：28 mΩ @ Vgs = 10V
- 耗散功率 Pd：34.7W
- 栅极电荷 Qg：20.3 nC @ Vgs = 30V
- 输入电容 Ciss：1.148 nF
- 反向传输电容 Crss：49.4 pF
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：PDFN3333-8L
- 品牌：XNRUSEMI（新锐）
三、关键特性
- 低导通电阻：在 Vgs = 10V 下 RDS(on) 仅 28 mΩ，适合需要低导通损耗的中低压开关场合，提升效率并降低导通发热。
- 优化的栅极特性：总栅极电荷 Qg = 20.3 nC（30V）在保证快速开关的同时控制栅驱能耗，有利于高频切换应用。
- 合理的寄生电容：Ciss = 1.148 nF、Crss = 49.4 pF，可在布局优化与驱动设计下获得可控的开关行为和较低的开关损耗。
- 高可靠性：100% EAS 雪崩保证和完整功能可靠性认证，适合工业环境和需长寿命的应用场景。
四、典型应用
- 同步降压（Buck）转换器的高侧/低侧开关
- 多相电源管理与 VRM
- 便携式及工业级 DC-DC 转换模块
- 电池管理与电源开关保护电路
五、封装与热管理
PDFN3333-8L 小尺寸封装结合高单元密度设计，可在受限空间内提供良好的导热通道。设计 PCB 时建议：
- 在器件下方和周围使用大面积散热铜箔与多层过孔进行热流散布；
- 对于持续接近额定 Id 的工况，应进行必要的热仿真与降额设计，确保芯片结温在安全范围内；
- 若需要更高电流或更低温升，可并联多颗器件并匹配驱动与 PCB 布局。
六、选型与使用建议
- 栅极驱动：推荐驱动电压在 10V 左右以获得标称 RDS(on)，同时在高频应用中根据 Qg 选择合适驱动器以平衡速度与驱动损耗。
- 开关过渡：关注 Crss 导致的 Miller 效应，在高速切换时配合合适的栅极电阻和必要的缓冲网络（如 RC 缓冲或阻尼）以抑制振铃和过冲。
- 保护设计：尽管器件通过雪崩能量测试，但仍建议在系统层面设计过流与过温保护，避免重复极限应力工况。
- 布局注意：确保源极/地回路短且低阻，减小回流环路面积以降低 EMI 与并联不平衡。
七、小结
XR20N06D 以 60V 耐压、低导通电阻和合理的开关特性为核心，结合高可靠性认证与紧凑 PDFN3333-8L 封装，是同步降压及中功率开关电源中性价比与可靠性兼具的选择。合理的驱动与 PCB 热设计可充分发挥其性能，提高系统效率与稳定性。
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