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XNRUSEMI 2N7002K
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI 2N7002K
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- 2N7002K
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.037g
- Electronic Component
- 1
- Electronic Component
- BM0264974420
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N7002K 产品概述
一、概览
2N7002K（品牌：XNRUSEMI/新锐）是一款沟槽式高单元密度的N沟道小功率MOSFET，采用SOT-23封装，面向多数小信号开关与负载开关场景。器件符合RoHS与绿色产品要求，并通过全面可靠性认证，ESD等级为2000V HBM，适合用于空间受限、成本敏感的便携与消费类电子产品。
二、主要参数要点
- 类型：N沟道MOSFET
- 漏源电压 Vdss：60V
- 连续漏极电流 Id：300mA
- 导通电阻 RDS(on)：2.87Ω @ Vgs=4.5V
- 阈值电压 Vgs(th)：2.5V（典型/门限电压）
- 功耗 Pd：350mW
- 栅极总电荷 Qg：1.7nC @ Vgs=4.5V
- 输入电容 Ciss：28pF；输出电容 Coss：11pF；反向传输电容 Crss：4pF
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-23
- ESD：2000V HBM
三、特性与优势
- 低电荷、低电容：Qg仅1.7nC，Ciss=28pF，便于快速开关，适合高频或脉冲开关场景，减小驱动能量消耗。
- 逻辑级驱动（注意门限）：RDS(on)在4.5V栅压下为2.87Ω，适合由5V逻辑直接驱动；若仅用3.3V驱动，导通电阻会显著上升，应验证实际导通损耗。
- 高耐压：60V耐压适应更高电压的开关与保护用途。
- 小封装节省PCB面积，适合高密度设计。
- 通过可靠性认证并具备2000V HBM ESD保护，提高生产与使用过程中的一致性与稳定性。
四、典型应用场景
- 低电流开关（传感器、继电器驱动前级）
- 负载开关与电源管理（小功率模块上电，使能线）
- 电平移位与接口缓冲（需注意在3.3V下的导通性能）
- 信号开关、脉冲控件、微控制器驱动的指示灯/小马达控制（低电流）
- 保护电路与反向电流控制
五、选型与电路建议
- 驱动电压：若要求低RDS(on)，建议采用≥4.5V栅压；在3.3V逻辑环境下，请在实际工况下测量导通电阻与压降，或考虑并联多枚器件以降低等效电阻（并联时需注意热均衡）。
- 功耗估算：在最大连续电流300mA与RDS(on)=2.87Ω条件下，开态损耗约为 I^2·R = 0.3^2·2.87 ≈ 0.259W，低于标称Pd=0.35W，但封装散热与环境温度会影响允许电流，应留有裕量。
- 开关布局：因器件电容小，易于快速切换；建议在门极加小电阻（10–100Ω）以抑制寄生振铃与限流；在高频应用中注意走线短、回流路径清晰。
- ESD与装配：尽管器件具2000V HBM级别，仍建议在生产与维修中采取静电防护措施。
六、封装与采购
- 标准封装：SOT-23，适合自动贴装与回流焊工艺。
- 型号标识：2N7002K（XNRUSEMI/新锐）
- 环保认证：RoHS 合规
总结：2N7002K是一款性能均衡、适合小功率开关与负载控制的N沟道MOSFET，优势在于小电荷、低电容与60V的高耐压。选型时注意栅极驱动电压与封装散热约束，能在多种便携与消费电子场景中提供可靠、成本友好的解决方案。
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