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XNRUSEMI XR20N06
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR20N06
- Type
- XNRUSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR20N06
- Electronic Component
- 1
- Package
- TO252-3L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0264974380
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 41.7W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR20N06 产品概述
一、概览
XR20N06 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道 MOSFET，额定漏源电压 60V，连续漏极电流 20A，封装为 TO252-3L。器件针对同步降压转换器等开关电源应用进行了优化，在导通电阻与栅极电荷之间实现良好平衡，适合中功率、高效率的转换场合。
二、主要电气参数
- 漏源电压 (Vdss)：60V
- 连续漏极电流 (Id)：20A
- 导通电阻 (RDS(on))：32mΩ @ Vgs=10V
- 耗散功率 (Pd)：41.7W
- 阈值电压 (Vgs(th))：2.5V
- 总栅极电荷 (Qg)：22nC @ Vgs=10V
- 输入电容 (Ciss)：1.355nF
- 反向传输电容 (Crss)：49pF
- 工作结温度：-55℃ ~ +175℃
三、性能亮点
该器件采用沟槽结构和高单元密度设计，在同等体积下提供较低的 RDS(on)，降低导通损耗。22nC 的栅极电荷量和较小的 Crss 有利于在开关频率较高的场合减少开关损耗与驱动能耗。器件通过 100% 雪崩耐量测试，可靠性经过完整功能认证，并符合 RoHS/绿色产品要求。
四、典型应用
- 同步降压转换器（点对点电源、笔记本/通信电源模块）
- DC-DC 转换、负载开关和功率管理模块
- 电机驱动与功率开关场合（中等电流）
- 汽车电子辅助电源（在符合温度和认证要求下）
五、选型与使用建议
- 驱动电压：为获得标称 RDS(on)，建议驱动栅极至 10V。若采用逻辑电平驱动，请确认在较低 Vgs 下的 RDS(on) 与散热预算。
- 开关损耗评估：Qg=22nC 在高频应用会带来显著驱动能耗，驱动器需能提供相应峰值电流；同时较小的 Crss 有助于降低开关过渡损耗与电压摆幅。
- 散热管理：Pd=41.7W 为理想散热条件下的耗散能力，实际使用中需结合 PCB 铜箔面积、散热片或热沉计算结温上升，避免长期在高结温下工作。
- Avalanche 与可靠性：器件支持雪崩耐量，适合有反向能量或不确定过压事件的系统，但仍建议在电路层面加入合适的保护（阻尼、TVS、RC 吸收等）。
六、封装与布局要点
TO252-3L 封装利于中功率 PCB 安装与导热，建议大面积散热焊盘并通过多层铜展开热流。布局时应尽量缩短高电流回路的走线，减小寄生电感，并将栅极驱动与信号地良好隔离，确保开关性能与 EMI 表现。
总结：XR20N06 在 60V/20A 级别中提供了平衡的导通损耗与开关性能，适合同步降压与中等功率开关应用。选型时注意驱动能力与热设计，以发挥器件最佳性能。
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