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XNRUSEMI XR100N04F
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR100N04F
- Type
- XNRUSEMI
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR100N04F
- Electronic Component
- 1
- Package
- PDFN5060-8L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.185g
- Electronic Component
- 1
- Electronic Component
- BM0264974422
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 142W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR100N04F 产品概述
一、产品简介
XR100N04F 是新锐（XNRUSEMI）推出的一款高单元密度沟槽式 N 沟道功率 MOSFET，专为同步降压转换器及高效开关电源应用设计。器件在保证低导通电阻的同时兼顾适度的栅极电荷与良好的耐久性，符合 RoHS 及绿色环保要求，并通过 100% 雪崩能量测试及完整的可靠性认证。
二、主要规格与电气特性
- 类型：N 沟道 MOSFET
- 漏源电压 Vdss：40 V
- 连续漏极电流 Id：100 A
- 导通电阻 RDS(on)：4.9 mΩ @ Vgs=10 V
- 耗散功率 Pd：142 W（注意需结合散热条件评估）
- 阈值电压 Vgs(th)：2.5 V（典型）
- 总栅极电荷 Qg：15 nC @ Vgs=10 V
- 输入电容 Ciss：3.778 nF；输出电容 Coss：267 pF；反向传输电容 Crss：224 pF
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：PDFN5060-8L
三、性能优势与应用场景
XR100N04F 在 40 V 级别中提供非常低的导通电阻（4.9 mΩ@10 V），适合高电流、高效率的同步整流应用。栅极电荷适中（15 nC），在速度与驱动功耗之间取得平衡，适用于同步降压转换器、服务器和通信电源、车载辅助电源、功率分配开关和电机驱动等场景。器件的高雪崩能量能力与广泛工作温度确保在恶劣环境下的稳定性。
四、封装与可靠性
PDFN5060-8L 小型封装在提供较好电气性能的同时利于 PCB 布局和热管理。142 W 的耗散能力依赖于良好的散热路径与铜厚设计，建议配合大面积散热铜箔或散热垫使用。器件已通过 100% 雪崩测试和完整可靠性认证，适合要求长寿命和高可用性的工业与商用系统。
五、典型应用与设计建议
- 驱动建议：为实现标称 RDS(on)，推荐采用 10 V 栅极驱动；若采用 6–8 V 驱动，需评估导通损耗变化。
- 开关损耗优化：Qg=15 nC、Coss 与 Crss 指示在高频工作下需要匹配合适的栅极驱动电流和合理的栅阻，以控制开关过渡与电磁干扰。
- 热设计：在高电流应用中，采用宽铜箔、多层散热过孔和热垫以降低结-壳温度。
- 布局注意：将功率回流路径最短化，降低寄生电感，合理布置旁路电容以减小开关尖峰。
XR100N04F 以其低阻抗、高电流承载能力和完善的可靠性，适合对效率与可靠性有较高要求的开关电源和功率管理方案。
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