WMSIC Electronic Components

XNRUSEMI XR1212M

ModelXR1212M
PackageDFN2020-6L
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR1212M
Type
XNRUSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR1212M
Electronic Component
1
Package
DFN2020-6L
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.038g
Electronic Component
1
Electronic Component
BM0264974452
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.9W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR1212M 产品概述

一、产品简介

XR1212M 是 XNRUSEMI(新锐)推出的一款高单元密度沟槽式 P 沟道 MOSFET,专为大多数同步降压转换器的高侧应用和功率管理场景优化设计。器件在低压(Vdss = 20V)下提供优异的导通电阻与栅极充放电特性,适用于空间受限的移动与通信电源模块。

二、主要电气参数

  • 类型:P沟道沟槽式MOSFET
  • 漏源电压 Vdss:20 V
  • 连续漏极电流 Id:12 A
  • 导通电阻 RDS(on):16 mΩ @ Vgs = 4.5 V
  • 耗散功率 Pd:1.9 W
  • 阈值电压 Vgs(th):1 V
  • 总栅极电荷 Qg:19 nC @ 4.5 V
  • 输入电容 Ciss:1.3 nF;反向传输电容 Crss:279 pF
  • 工作温度:-55 ℃ ~ +150 ℃

三、封装与热管理

封装为 DFN2020-6L,小体积利于高密度 PCB 布局。由于封装面积有限,建议在 PCB 设计中使用足够的散热铜箔和过孔(thermal vias)将热量传导到内部/背面散热层,以降低结温并提升长期可靠性。器件额定耗散功率 Pd = 1.9 W,应在实际工作点评估实际结温。

四、典型应用与使用建议

  • 同步降压转换器(高侧开关)
  • 负载开关、反向保护与电源路径控制
    使用时需注意 P 沟道器件为负向栅源驱动(相对于源极),确保栅极驱动幅值与驱动速率匹配 Qg(19 nC)以控制开关损耗。推荐在门极串联小阻值以抑制振铃,并在高频开关应用中做好栅极驱动回路的阻抗控制与去耦。

五、PCB 布局与可靠性要点

布局要点:缩短源/漏与驱动回路的回流路径,增大散热铜箔面积,靠近器件放置退耦电容。产品符合 RoHS 和绿色环保要求,并提供 100% EAS 保证和全功能可靠性测试,适合工业级与消费级长期供应链需求。

六、总结

XR1212M 在 20V 级别提供低 RDS(on) 与中等栅极电荷的均衡设计,适合对导通损耗与开关损耗都有要求的同步降压与电源路径控制场景。合理的 PCB 热设计与匹配的栅极驱动能发挥器件最佳性能。若需针对具体工作点的损耗计算或布局建议,可提供额外参数协助评估。

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