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XNRUSEMI XR2333
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR2333
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR2333
- Electronic Component
- 1
- Package
- SOT23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.04g
- Electronic Component
- 1
- Electronic Component
- BM0264974381
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR2333 产品概述
一、产品简介
XR2333 是 XNRUSEMI(新锐) 推出的高密度沟槽式 P 沟道 MOSFET，单片封装（SOT-23），适用于多数小功率开关和负载开关场合。器件符合 RoHS 与绿色产品要求，设计注重低导通损耗与良好的功能可靠性，适合便携电源、电源路径切换与负载保护等应用。
二、主要电气参数
- 类型：P 沟道 MOSFET（1 个）
- 漏源间耐压 Vdss：20 V
- 连续漏极电流 Id：6 A
- 导通电阻 RDS(on)：21 mΩ @ |Vgs| = 4.5 V（注意 P 沟道栅源电压极性）
- 阈值电压 Vgs(th)：约 1 V（典型值）
- 最大耗散功率 Pd：1.5 W（SOT-23 封装，需考虑 PCB 热耗散）
- 栅极电荷 Qg：33.7 nC @ |Vgs| = 4.5 V
- 输入电容 Ciss：1.2 nF；输出电容 Coss：191 pF；反向传输电容 Crss：168 pF
- 工作温度范围：-55 ℃ ~ +150 ℃
三、产品特点与优势
- 低导通电阻（21 mΩ）在低压、高电流场合可显著降低导通损耗，提升效率。
- 沟槽工艺与紧凑 SOT-23 封装兼顾尺寸与性能，便于小型化设计。
- 完整的电容与栅极电荷规格便于评估开关损耗与驱动要求。
- 宽工作温度与符合环保标准，满足工业级与消费类产品长期可靠性需求。
四、典型应用场景
- 电池供电设备高侧开关与电源路径控制（负载开关、充放电控制）
- USB/移动设备电源管理与背光/LED 开关
- 小功率逆变器与电源分配模块的保护与切换
- 带反向电流保护的负载断开电路
五、使用建议与注意事项
- 作为 P 沟道高侧开关时，栅极需相对于源极施加负偏压（例如将栅拉至地以导通）；注意 |Vgs| 不超过器件极限。
- SOT-23 封装热阻较大，Pd 1.5 W 为在良好 PCB 散热条件下的评级；建议在 PCB 铜箔和过孔设计上增加散热面积与热沉。
- Qg = 33.7 nC 表明栅极驱动能量需求不可忽视，若频繁开关应选用合适驱动器以降低切换损耗与开关应力。
- Crss 与 Coss 会影响开关瞬态（尤其在快速边沿时），必要时可配合 RC 缓冲或吸收网络以抑制电压尖峰和电磁干扰。
六、封装与订购信息
- 封装：SOT-23（常见 PCB 布局，便于表面贴装）
- 型号：XR2333（品牌：XNRUSEMI / 新锐）
- 环保：RoHS 合规，绿色产品
如需电气特性曲线、等效电路、推荐 PCB 布局或典型应用原理图（高侧开关、反向保护电路等），可提供更详细的设计参考与仿真建议。
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