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YANGJIE YJG110G10B
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
13
specifications
Core information
- Product name
- YANGJIE YJG110G10B
- Type
- PDFN5060-8L
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- YANGJIE
- Electronic Component
- YJG110G10B
- Electronic Component
- 1
- Package
- PDFN5060-8L
- Electronic Component
- 0.201g
- Electronic Component
- 1
- Electronic Component
- BM0263579517
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
YJG110G10B 产品概述
一、核心参数概览
- 类型：N沟道功率MOSFET（分裂栅沟槽工艺）
- 漏源电压 Vdss：100V
- 连续漏极电流 Id：110A
- 导通电阻 RDS(on)：4mΩ @ Vgs=10V
- 耗散功率 Pd：113W
- 阈值电压 Vgs(th)：3V
- 总栅极电荷 Qg：55nC @ Vgs=10V
- 输入电容 Ciss：4.3nF；输出电容 Coss：1.6nF；反向传输电容 Crss：30pF
- 封装：PDFN5060-8L；湿度敏感度等级：MSL1；环氧符合 UL94 V-0， 无卤
二、关键特性与优势
- 分裂栅沟槽（split-gate trench）与高密度单元设计，实现极低导通电阻与高电流承载能力，适合高效率功率开关。
- 优异散热封装（PDFN5060-8L）配合大底焊盘，有利于热量传导与PCB散热设计。
- 工艺和材料符合阻燃及无卤要求，可靠性和环保性能良好。
三、驱动与开关性能考量
- Qg=55nC 表明栅极电荷较大，选用驱动器时需考虑驱动电流能力与驱动能耗，以确保快速切换且不过度发热。
- RDS(on) 标注在 Vgs=10V，若工作在低栅压（如5V）下，导通电阻会显著上升，应据此评估导通损耗。
- Crss/ Coss 对 Miller 效应与开关瞬态有重要影响，快速边沿切换时需防止振铃与电压过冲。
四、散热与封装布局建议
- 利用PDFN底部大焊盘与多通孔（thermal vias）将热流传至内外层铜箔，提升散热能力。
- 在高功率运行场景，建议扩大铜箔面积并配合风冷或散热铜柱，按实际板级热阻评估器件结温。
- 采用合适的回流焊工艺与MSL1处理，有利于装配可靠性。
五、典型应用场景
- 同步整流与降压 DC-DC 转换器、高密度电源模块；
- 电机驱动、伺服放大器及工业功率开关；
- 通信、电源管理及服务器电源前端等需要大电流低损耗的场合。
六、选型与使用注意
- 若需并联扩容，注意电流均流与门极驱动同步；
- 在高开关频率应用中综合评估开关损耗与驱动损耗，必要时在栅极串联阻阻尼或加入驱动吸收网络。
- 依据实际工作温度和PCB散热条件，对Pd做合理降额设计。
总结：YJG110G10B 以低 RDS(on)、高电流和良好封装散热为主要卖点，适用于对导通损耗和热管理要求较高的功率电子场景。
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